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2017 | 1 |
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Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.
Sci Rep. 2017 Dec 18;7(1):17734. doi: 10.1038/s41598-017-17985-9.
Sci Rep. 2017.
PMID: 29255167
Free PMC article.
Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.
Chai J, Walker G, Wang L, Massoubre D, Tan SH, Chaik K, Hold L, Iacopi A.
Chai J, et al. Among authors: chaik k.
Sci Rep. 2015 Dec 4;5:17811. doi: 10.1038/srep17811.
Sci Rep. 2015.
PMID: 26634813
Free PMC article.
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