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Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.
ACS Omega. 2021 Dec 28;7(1):804-809. doi: 10.1021/acsomega.1c05458. eCollection 2022 Jan 11.
ACS Omega. 2021.
PMID: 35036747
Free PMC article.
Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.
Mballo A, Srivastava A, Sundaram S, Vuong P, Karrakchou S, Halfaya Y, Gautier S, Voss PL, Ahaitouf A, Salvestrini JP, Ougazzaden A.
Mballo A, et al. Among authors: karrakchou s.
Nanomaterials (Basel). 2021 Jan 15;11(1):211. doi: 10.3390/nano11010211.
Nanomaterials (Basel). 2021.
PMID: 33467590
Free PMC article.
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Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
Vuong P, Sundaram S, Mballo A, Patriarche G, Leone S, Benkhelifa F, Karrakchou S, Moudakir T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A.
Vuong P, et al. Among authors: karrakchou s.
ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55460-55466. doi: 10.1021/acsami.0c16850. Epub 2020 Nov 25.
ACS Appl Mater Interfaces. 2020.
PMID: 33237738
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A.
Karrakchou S, et al.
Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z.
Sci Rep. 2020.
PMID: 33303773
Free PMC article.
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