Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Search Results
3 results
Filters applied: . Clear all
Results are displayed in a computed author sort order.
The Results By Year timeline is not available.
Page 1
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
Micromachines (Basel). 2019.
PMID: 31614745
Free PMC article.
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: kabouche r.
Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101.
Micromachines (Basel). 2020.
PMID: 31963553
Free PMC article.
Item in Clipboard
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: kabouche r.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
Item in Clipboard
Cite
Cite