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The valley Nernst effect in WSe2.
Nat Commun. 2019 Dec 19;10(1):5796. doi: 10.1038/s41467-019-13590-8.
Nat Commun. 2019.
PMID: 31857586
Free PMC article.
Charge transfers and charged defects in WSe2/graphene-SiC interfaces.
Dappe YJ, Almadori Y, Dau MT, Vergnaud C, Jamet M, Paillet C, Journot T, Hyot B, Pochet P, Grévin B.
Dappe YJ, et al. Among authors: journot t.
Nanotechnology. 2020 Apr 3;31(25):255709. doi: 10.1088/1361-6528/ab8083. Epub 2020 Mar 17.
Nanotechnology. 2020.
PMID: 32182596
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Remote epitaxy using graphene enables growth of stress-free GaN.
Journot T, Okuno H, Mollard N, Michon A, Dagher R, Gergaud P, Dijon J, Kolobov AV, Hyot B.
Journot T, et al.
Nanotechnology. 2019 Dec 13;30(50):505603. doi: 10.1088/1361-6528/ab4501. Epub 2019 Sep 16.
Nanotechnology. 2019.
PMID: 31530744
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Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.
Journot T, Bouchiat V, Gayral B, Dijon J, Hyot B.
Journot T, et al.
ACS Appl Mater Interfaces. 2018 Jun 6;10(22):18857-18862. doi: 10.1021/acsami.8b01194. Epub 2018 May 24.
ACS Appl Mater Interfaces. 2018.
PMID: 29745232
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Towards the Application of Structure-Property Relationship Modeling in Materials Science: Predicting the Seebeck Coefficient for Ionic Liquid/Redox Couple Systems.
Sosnowska A, Barycki M, Gajewicz A, Bobrowski M, Freza S, Skurski P, Uhl S, Laux E, Journot T, Jeandupeux L, Keppner H, Puzyn T.
Sosnowska A, et al. Among authors: journot t.
Chemphyschem. 2016 Jun 3;17(11):1591-600. doi: 10.1002/cphc.201600080. Epub 2016 Mar 22.
Chemphyschem. 2016.
PMID: 26919483
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