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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.
Materials (Basel). 2022 Jan 31;15(3):1118. doi: 10.3390/ma15031118.
Materials (Basel). 2022.
PMID: 35161062
Free PMC article.
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.
Balagula RM, Subačius L, Jorudas J, Janonis V, Prystawko P, Grabowski M, Kašalynas I.
Balagula RM, et al. Among authors: jorudas j.
Materials (Basel). 2022 Mar 11;15(6):2066. doi: 10.3390/ma15062066.
Materials (Basel). 2022.
PMID: 35329518
Free PMC article.
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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J, Šimukovič A, Dub M, Sakowicz M, Prystawko P, Indrišiūnas S, Kovalevskij V, Rumyantsev S, Knap W, Kašalynas I.
Jorudas J, et al.
Micromachines (Basel). 2020 Dec 20;11(12):1131. doi: 10.3390/mi11121131.
Micromachines (Basel). 2020.
PMID: 33419371
Free PMC article.
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Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside.
Indrišiūnas S, Svirplys E, Jorudas J, Kašalynas I.
Indrišiūnas S, et al. Among authors: jorudas j.
Micromachines (Basel). 2021 Apr 6;12(4):407. doi: 10.3390/mi12040407.
Micromachines (Basel). 2021.
PMID: 33917633
Free PMC article.
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Ultra-broadband absorbance of nanometer-thin pyrolyzed-carbon film on silicon nitride membrane.
Jorudas J, Rehman H, Cojocari M, Pashnev D, Urbanowicz A, Kašalynas I, Bertoni B, Vicarelli L, Pitanti A, Malykhin S, Svirko Y, Kuzhir P, Fedorov G.
Jorudas J, et al.
Nanotechnology. 2024 May 9;35(30). doi: 10.1088/1361-6528/ad4157.
Nanotechnology. 2024.
PMID: 38648779
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Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene.
Jorudas J, Pashnev D, Kašalynas I, Ignatjev I, Niaura G, Selskis A, Astachov V, Alexeeva N.
Jorudas J, et al.
Nanomaterials (Basel). 2022 Nov 15;12(22):4017. doi: 10.3390/nano12224017.
Nanomaterials (Basel). 2022.
PMID: 36432303
Free PMC article.
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