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Standards for the Characterization of Endurance in Resistive Switching Devices.
Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: jing x. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.
Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.
Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal H, Palumbo F, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, Lanza M. Jiang L, et al. Among authors: jing x. ACS Appl Mater Interfaces. 2017 Nov 15;9(45):39758-39770. doi: 10.1021/acsami.7b10948. Epub 2017 Nov 1. ACS Appl Mater Interfaces. 2017. PMID: 29039199
Electroforming in Metal-Oxide Memristive Synapses.
Wang T, Shi Y, Puglisi FM, Chen S, Zhu K, Zuo Y, Li X, Jing X, Han T, Guo B, Bukvišová K, Kachtík L, Kolíbal M, Wen C, Lanza M. Wang T, et al. Among authors: jing x. ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11806-11814. doi: 10.1021/acsami.9b19362. Epub 2020 Feb 25. ACS Appl Mater Interfaces. 2020. PMID: 32036650
Inkjet-printed h-BN memristors for hardware security.
Zhu K, Vescio G, González-Torres S, López-Vidrier J, Frieiro JL, Pazos S, Jing X, Gao X, Wang SD, Ascorbe-Muruzábal J, Ruiz-Fuentes JA, Cirera A, Garrido B, Lanza M. Zhu K, et al. Among authors: jing x. Nanoscale. 2023 Jun 15;15(23):9985-9992. doi: 10.1039/d3nr00030c. Nanoscale. 2023. PMID: 37232241
3,007 results