Jhang SH - Search Results

1

Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction.

Lee JH, Choi I, Jeong NB, Kim M, Yu J, Jhang SH, Chung HJ. Lee JH, et al. Among authors: jhang sh. Nanomaterials (Basel). 2022 Aug 31;12(17):3029. doi: 10.3390/nano12173029. Nanomaterials (Basel). 2022. PMID: 36080066 Free PMC article.

2

Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers.

Kim HC, Kim H, Lee JU, Lee HB, Choi DH, Lee JH, Lee WH, Jhang SH, Park BH, Cheong H, Lee SW, Chung HJ. Kim HC, et al. Among authors: jhang sh. ACS Nano. 2015 Jul 28;9(7):6854-60. doi: 10.1021/acsnano.5b01727. Epub 2015 Jul 10. ACS Nano. 2015. PMID: 26143940

3

SERS-Based Flavonoid Detection Using Ethylenediamine-β-Cyclodextrin as a Capturing Ligand.

Choi JM, Hahm E, Park K, Jeong D, Rho WY, Kim J, Jeong DH, Lee YS, Jhang SH, Chung HJ, Cho E, Yu JH, Jun BH, Jung S. Choi JM, et al. Among authors: jhang sh. Nanomaterials (Basel). 2017 Jan 6;7(1):8. doi: 10.3390/nano7010008. Nanomaterials (Basel). 2017. PMID: 28336842 Free PMC article.

4

The evolution of surface cleanness and electronic properties of graphene field-effect transistors during mechanical cleaning with atomic force microscopy.

Park DH, Cho YJ, Lee JH, Choi I, Jhang SH, Chung HJ. Park DH, et al. Among authors: jhang sh. Nanotechnology. 2019 Sep 27;30(39):394003. doi: 10.1088/1361-6528/ab2cf6. Epub 2019 Jun 26. Nanotechnology. 2019. PMID: 31242472

5

Large Temperature-Independent Magnetoresistance without Gating Operation in Monolayer Graphene.

Jeon J, Lee DH, Kim YS, Chung HJ, Jhang SH, Kwon Y, Lee S, Park BH. Jeon J, et al. Among authors: jhang sh. ACS Appl Mater Interfaces. 2020 Nov 25;12(47):53134-53140. doi: 10.1021/acsami.0c16083. Epub 2020 Nov 12. ACS Appl Mater Interfaces. 2020. PMID: 33179499

6

Semiconductor-less vertical transistor with I_ON/I_OFF of 10⁶.

Lee JH, Shin DH, Yang H, Jeong NB, Park DH, Watanabe K, Taniguchi T, Kim E, Lee SW, Jhang SH, Park BH, Kuk Y, Chung HJ. Lee JH, et al. Among authors: jhang sh. Nat Commun. 2021 Feb 12;12(1):1000. doi: 10.1038/s41467-021-21138-y. Nat Commun. 2021. PMID: 33579924 Free PMC article.

7

Atomic layer deposited Al₂O₃passivation layer for few-layer WS₂field effect transistors.

You YG, Shin DH, Ryu JH, Campbell EEB, Chung HJ, Jhang SH. You YG, et al. Among authors: jhang sh. Nanotechnology. 2021 Sep 21;32(50). doi: 10.1088/1361-6528/ac2390. Nanotechnology. 2021. PMID: 34479221

8

Charge Transport in UV-Oxidized Graphene and Its Dependence on the Extent of Oxidation.

Lee HY, Haidari MM, Kee EH, Choi JS, Park BH, Campbell EEB, Jhang SH. Lee HY, et al. Among authors: jhang sh. Nanomaterials (Basel). 2022 Aug 18;12(16):2845. doi: 10.3390/nano12162845. Nanomaterials (Basel). 2022. PMID: 36014709 Free PMC article.

9

Indirect Band Gap in Scrolled MoS₂ Monolayers.

Na J, Park C, Lee CH, Choi WR, Choi S, Lee JU, Yang W, Cheong H, Campbell EEB, Jhang SH. Na J, et al. Among authors: jhang sh. Nanomaterials (Basel). 2022 Sep 26;12(19):3353. doi: 10.3390/nano12193353. Nanomaterials (Basel). 2022. PMID: 36234481 Free PMC article.

10

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS₂ Barristors.

Shin DH, You YG, Jo SI, Jeong GH, Campbell EEB, Chung HJ, Jhang SH. Shin DH, et al. Among authors: jhang sh. Nanomaterials (Basel). 2022 Oct 28;12(21):3820. doi: 10.3390/nano12213820. Nanomaterials (Basel). 2022. PMID: 36364596 Free PMC article.

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