Ishikawa F - Search Results

1

Metamorphic GaAs/GaAsBi Heterostructured Nanowires.

Ishikawa F, Akamatsu Y, Watanabe K, Uesugi F, Asahina S, Jahn U, Shimomura S. Ishikawa F, et al. Nano Lett. 2015 Nov 11;15(11):7265-72. doi: 10.1021/acs.nanolett.5b02316. Epub 2015 Oct 28. Nano Lett. 2015. PMID: 26501188

2

Selective synthesis of compound semiconductor/oxide composite nanowires.

Hibi H, Yamaguchi M, Yamamoto N, Ishikawa F. Hibi H, et al. Among authors: ishikawa f. Nano Lett. 2014 Dec 10;14(12):7024-30. doi: 10.1021/nl503385g. Epub 2014 Oct 29. Nano Lett. 2014. PMID: 25347721

3

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique.

Patil PK, Luna E, Matsuda T, Yamada K, Kamiya K, Ishikawa F, Shimomura S. Patil PK, et al. Among authors: ishikawa f. Nanotechnology. 2017 Mar 10;28(10):105702. doi: 10.1088/1361-6528/aa596c. Epub 2017 Feb 1. Nanotechnology. 2017. PMID: 28145284

4

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure.

Chen S, Jansson M, Stehr JE, Huang Y, Ishikawa F, Chen WM, Buyanova IA. Chen S, et al. Among authors: ishikawa f. Nano Lett. 2017 Mar 8;17(3):1775-1781. doi: 10.1021/acs.nanolett.6b05097. Epub 2017 Feb 8. Nano Lett. 2017. PMID: 28170267 Free article.

5

Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire.

Chen S, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Chen S, et al. Among authors: ishikawa f. Nano Lett. 2019 Feb 13;19(2):885-890. doi: 10.1021/acs.nanolett.8b04103. Epub 2019 Jan 9. Nano Lett. 2019. PMID: 30608174 Free article.

6

Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires.

Matsuda T, Takada K, Yano K, Tsutsumi R, Yoshikawa K, Shimomura S, Shimizu Y, Nagashima K, Yanagida T, Ishikawa F. Matsuda T, et al. Among authors: ishikawa f. Nano Lett. 2019 Dec 11;19(12):8510-8518. doi: 10.1021/acs.nanolett.9b02932. Epub 2019 Sep 27. Nano Lett. 2019. PMID: 31525986

7

Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.

Araki Y, Yamaguchi M, Ishikawa F. Araki Y, et al. Among authors: ishikawa f. Nanotechnology. 2013 Feb 15;24(6):065601. doi: 10.1088/0957-4484/24/6/065601. Epub 2013 Jan 16. Nanotechnology. 2013. PMID: 23324475

8

Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires.

Chen SL, Chen WM, Ishikawa F, Buyanova IA. Chen SL, et al. Among authors: ishikawa f. Sci Rep. 2015 Jun 23;5:11653. doi: 10.1038/srep11653. Sci Rep. 2015. PMID: 26100755 Free PMC article.

9

Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires.

Yukimune M, Fujiwara R, Mita T, Tsuda N, Natsui J, Shimizu Y, Jansson M, Balagula R, Chen WM, Buyanova IA, Ishikawa F. Yukimune M, et al. Among authors: ishikawa f. Nanotechnology. 2019 Jun 14;30(24):244002. doi: 10.1088/1361-6528/ab0974. Epub 2019 Feb 22. Nanotechnology. 2019. PMID: 30794991 Free article.

10

Polytypism in GaAs/GaNAs core-shell nanowires.

Yukimune M, Fujiwara R, Mita T, Ishikawa F. Yukimune M, et al. Among authors: ishikawa f. Nanotechnology. 2020 Dec 11;31(50):505608. doi: 10.1088/1361-6528/abb904. Nanotechnology. 2020. PMID: 32937605

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