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Aligned AlN nanowires by self-organized vapor-solid growth.
Yazdi GR, Persson PO, Gogova D, Fornari R, Hultman L, Syväjärvi M, Yakimova R. Yazdi GR, et al. Among authors: hultman l. Nanotechnology. 2009 Dec 9;20(49):495304. doi: 10.1088/0957-4484/20/49/495304. Epub 2009 Nov 11. Nanotechnology. 2009. PMID: 19904025
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.
Lundskog A, Palisaitis J, Hsu CW, Eriksson M, Karlsson KF, Hultman L, Persson PO, Forsberg U, Holtz PO, Janzén E. Lundskog A, et al. Among authors: hultman l. Nanotechnology. 2012 Aug 3;23(30):305708. doi: 10.1088/0957-4484/23/30/305708. Epub 2012 Jul 11. Nanotechnology. 2012. PMID: 22781961
Crystal phase engineered quantum wells in ZnO nanowires.
Khranovskyy V, Glushenkov AM, Chen Y, Khalid A, Zhang H, Hultman L, Monemar B, Yakimova R. Khranovskyy V, et al. Among authors: hultman l. Nanotechnology. 2013 May 31;24(21):215202. doi: 10.1088/0957-4484/24/21/215202. Epub 2013 Apr 26. Nanotechnology. 2013. PMID: 23619281
Atom probe tomography study of Mg-doped GaN layers.
Khromov S, Gregorius D, Schiller R, Lösch J, Wahl M, Kopnarski M, Amano H, Monemar B, Hultman L, Pozina G. Khromov S, et al. Among authors: hultman l. Nanotechnology. 2014 Jul 11;25(27):275701. doi: 10.1088/0957-4484/25/27/275701. Epub 2014 Jun 24. Nanotechnology. 2014. PMID: 24960447
100 results