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InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study.
Nanotechnology. 2014 Nov 14;25(45):455501. doi: 10.1088/0957-4484/25/45/455501. Epub 2014 Oct 20.
Nanotechnology. 2014.
PMID: 25327948
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.
Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E, Pangrác J.
Hazdra P, et al. Among authors: hulicius e.
J Nanosci Nanotechnol. 2011 Aug;11(8):6804-9. doi: 10.1166/jnn.2011.4223.
J Nanosci Nanotechnol. 2011.
PMID: 22103083
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GaSb based lasers operating near 2.3 microm for high resolution absorption spectroscopy.
Civis S, Horká V, Simecek T, Hulicius E, Pangrác J, Oswald J, Petrícek O, Rouillard Y, Alibert C, Werner R.
Civis S, et al. Among authors: hulicius e.
Spectrochim Acta A Mol Biomol Spectrosc. 2005 Oct;61(13-14):3066-9. doi: 10.1016/j.saa.2004.11.029. Epub 2004 Dec 25.
Spectrochim Acta A Mol Biomol Spectrosc. 2005.
PMID: 16165053
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