Hu Y - Search Results

1

Non-epitaxial single-crystal 2D material growth by geometric confinement.

Kim KS, Lee D, Chang CS, Seo S, Hu Y, Cha S, Kim H, Shin J, Lee JH, Lee S, Kim JS, Kim KH, Suh JM, Meng Y, Park BI, Lee JH, Park HS, Kum HS, Jo MH, Yeom GY, Cho K, Park JH, Bae SH, Kim J. Kim KS, et al. Among authors: hu y. Nature. 2023 Feb;614(7946):88-94. doi: 10.1038/s41586-022-05524-0. Epub 2023 Jan 18. Nature. 2023. PMID: 36653458

2

Origin of Indium Diffusion in High-k Oxide HfO2.

Hu Y, Wang C, Dong H, Wallace RM, Cho K, Wang WH, Wang W. Hu Y, et al. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7595-600. doi: 10.1021/acsami.6b01068. Epub 2016 Mar 10. ACS Appl Mater Interfaces. 2016. PMID: 26939534

3

Interlayer Engineering of Band Gap and Hole Mobility in p-Type Oxide SnO.

Hu Y, Schlom D, Datta S, Cho K. Hu Y, et al. ACS Appl Mater Interfaces. 2022 Jun 8;14(22):25670-25679. doi: 10.1021/acsami.2c03554. Epub 2022 May 24. ACS Appl Mater Interfaces. 2022. PMID: 35609177

4

Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths.

Lee Y, Hu Y, Lang X, Kim D, Li K, Ping Y, Fu KC, Cho K. Lee Y, et al. Among authors: hu y. Nat Commun. 2022 Dec 6;13(1):7501. doi: 10.1038/s41467-022-35048-0. Nat Commun. 2022. PMID: 36473851 Free PMC article.

5

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides.

Wang X, Hu Y, Kim SY, Addou R, Cho K, Wallace RM. Wang X, et al. Among authors: hu y. ACS Nano. 2023 Oct 24;17(20):20353-20365. doi: 10.1021/acsnano.3c06494. Epub 2023 Oct 3. ACS Nano. 2023. PMID: 37788682

6

Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide.

Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Wang X, et al. Among authors: hu y. ACS Appl Mater Interfaces. 2024 Mar 13;16(10):13258-13266. doi: 10.1021/acsami.3c18332. Epub 2024 Feb 29. ACS Appl Mater Interfaces. 2024. PMID: 38422472

7

Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors.

Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: hu y. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788

8

Electronic structures and anisotropic carrier mobilities of monolayer ternary metal iodides MLaI₅(M=Mg, Ca, Sr, Ba).

Xin B, Hu Y, Wu M, Cui J, Li L, Cheng Y, Liu H, Lu F, Cho K, Wang WH. Xin B, et al. Among authors: hu y. J Phys Condens Matter. 2021 Jul 5;33(35). doi: 10.1088/1361-648X/ac0c3d. J Phys Condens Matter. 2021. PMID: 34139679

9

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.

Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: hu y. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079

10

Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals.

Dong S, Hu Y, Zhang X, Guo Z, Chen R, Mao L. Dong S, et al. Among authors: hu y. Small. 2024 Jan 12:e2307360. doi: 10.1002/smll.202307360. Online ahead of print. Small. 2024. PMID: 38217294

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