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Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping.
Solís-Cisneros HI, Hu Y, Camas-Anzueto JL, Grajales-Coutiño R, Anwar AR, Martínez-Revuelta R, Hernández-de-León HR, Hernández-Gutiérrez CA. Solís-Cisneros HI, et al. Among authors: hu y. Nanomaterials (Basel). 2022 Dec 6;12(23):4347. doi: 10.3390/nano12234347. Nanomaterials (Basel). 2022. PMID: 36500970 Free PMC article.
Study of the heavily p-type doping of cubic GaN with Mg.
Hernández-Gutiérrez CA, Casallas-Moreno YL, Rangel-Kuoppa VT, Cardona D, Hu Y, Kudriatsev Y, Zambrano-Serrano MA, Gallardo-Hernandez S, Lopez-Lopez M. Hernández-Gutiérrez CA, et al. Among authors: hu y. Sci Rep. 2020 Oct 8;10(1):16858. doi: 10.1038/s41598-020-73872-w. Sci Rep. 2020. PMID: 33033291 Free PMC article.
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.
Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: hu y. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788
Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.
Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: hu y. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079
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