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Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2.
ACS Appl Mater Interfaces. 2021.
PMID: 33529520
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
Grabowski M, Grzanka E, Grzanka S, Lachowski A, Smalc-Koziorowska J, Czernecki R, Hrytsak R, Moneta J, Gawlik G, Turos A, Leszczyński M.
Grabowski M, et al. Among authors: hrytsak r.
Sci Rep. 2021 Jan 28;11(1):2458. doi: 10.1038/s41598-021-81017-w.
Sci Rep. 2021.
PMID: 33510188
Free PMC article.
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Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.
Hrytsak R, Kempisty P, Grzanka E, Leszczynski M, Sznajder M.
Hrytsak R, et al.
Materials (Basel). 2022 Jan 9;15(2):478. doi: 10.3390/ma15020478.
Materials (Basel). 2022.
PMID: 35057196
Free PMC article.
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DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.
Sznajder M, Hrytsak R.
Sznajder M, et al. Among authors: hrytsak r.
Materials (Basel). 2021 Oct 29;14(21):6532. doi: 10.3390/ma14216532.
Materials (Basel). 2021.
PMID: 34772058
Free PMC article.
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