Hou TH - Search Results

1

Voltage-Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory.

Yap SM, Wang IT, Wu MH, Hou TH. Yap SM, et al. Among authors: hou th. Front Neurosci. 2022 Apr 13;16:868671. doi: 10.3389/fnins.2022.868671. eCollection 2022. Front Neurosci. 2022. PMID: 35495030 Free PMC article.

2

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory.

Hsu CW, Wang YF, Wan CC, Wang IT, Chou CT, Lai WL, Lee YJ, Hou TH. Hsu CW, et al. Among authors: hou th. Nanotechnology. 2014 Apr 25;25(16):165202. doi: 10.1088/0957-4484/25/16/165202. Nanotechnology. 2014. PMID: 24675107

3

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device.

Wang YF, Lin YC, Wang IT, Lin TP, Hou TH. Wang YF, et al. Among authors: hou th. Sci Rep. 2015 May 8;5:10150. doi: 10.1038/srep10150. Sci Rep. 2015. PMID: 25955658 Free PMC article.

4

Fully parallel write/read in resistive synaptic array for accelerating on-chip learning.

Gao L, Wang IT, Chen PY, Vrudhula S, Seo JS, Cao Y, Hou TH, Yu S. Gao L, et al. Among authors: hou th. Nanotechnology. 2015 Nov 13;26(45):455204. doi: 10.1088/0957-4484/26/45/455204. Nanotechnology. 2015. PMID: 26491032

5

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications.

Wang IT, Chang CC, Chiu LW, Chou T, Hou TH. Wang IT, et al. Among authors: hou th. Nanotechnology. 2016 Sep 9;27(36):365204. doi: 10.1088/0957-4484/27/36/365204. Epub 2016 Aug 2. Nanotechnology. 2016. PMID: 27483492

6

Device quantization policy in variation-aware in-memory computing design.

Chang CC, Li ST, Pan TL, Tsai CM, Wang IT, Chang TS, Hou TH. Chang CC, et al. Among authors: hou th. Sci Rep. 2022 Jan 7;12(1):112. doi: 10.1038/s41598-021-04159-x. Sci Rep. 2022. PMID: 34997104 Free PMC article.

7

Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic Memristor.

Liu B, Liu Z, Chiu IS, Di M, Wu Y, Wang JC, Hou TH, Lai CS. Liu B, et al. Among authors: hou th. ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20237-20243. doi: 10.1021/acsami.8b04685. Epub 2018 Jun 11. ACS Appl Mater Interfaces. 2018. PMID: 29873237

8

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf_1-xZr_xO₂ Diodes.

Hsiang KY, Liao CY, Wang JF, Lou ZF, Lin CY, Chiang SH, Liu CW, Hou TH, Lee MH. Hsiang KY, et al. Among authors: hou th. Nanomaterials (Basel). 2021 Oct 12;11(10):2685. doi: 10.3390/nano11102685. Nanomaterials (Basel). 2021. PMID: 34685126 Free PMC article.

9

Bi₂O₂Se-Based True Random Number Generator for Security Applications.

Liu B, Chang YF, Li J, Liu X, Wang LA, Verma D, Liang H, Zhu H, Zhao Y, Li LJ, Hou TH, Lai CS. Liu B, et al. Among authors: hou th. ACS Nano. 2022 Apr 26;16(4):6847-6857. doi: 10.1021/acsnano.2c01784. Epub 2022 Mar 25. ACS Nano. 2022. PMID: 35333049 Free PMC article.

10

Standards for the Characterization of Endurance in Resistive Switching Devices.

Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: hou th. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.

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