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Bi2O2Se-Based True Random Number Generator for Security Applications.
Liu B, Chang YF, Li J, Liu X, Wang LA, Verma D, Liang H, Zhu H, Zhao Y, Li LJ, Hou TH, Lai CS. Liu B, et al. Among authors: hou th. ACS Nano. 2022 Apr 26;16(4):6847-6857. doi: 10.1021/acsnano.2c01784. Epub 2022 Mar 25. ACS Nano. 2022. PMID: 35333049 Free PMC article.
Bi2O2Se-Based Memristor-Aided Logic.
Liu B, Zhao Y, Verma D, Wang LA, Liang H, Zhu H, Li LJ, Hou TH, Lai CS. Liu B, et al. Among authors: hou th. ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15391-15398. doi: 10.1021/acsami.1c00177. Epub 2021 Mar 16. ACS Appl Mater Interfaces. 2021. PMID: 33723989
Standards for the Characterization of Endurance in Resistive Switching Devices.
Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: hou th. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.
2D Materials-Based Static Random-Access Memory.
Liu CJ, Wan Y, Li LJ, Lin CP, Hou TH, Huang ZY, Hu VP. Liu CJ, et al. Among authors: hou th. Adv Mater. 2022 Dec;34(48):e2107894. doi: 10.1002/adma.202107894. Epub 2022 Jan 21. Adv Mater. 2022. PMID: 34932857
Phase/Interfacial-Engineered Two-Dimensional-Layered WSe2 Films by a Plasma-Assisted Selenization Process: Modulation of Oxygen Vacancies in Resistive Random-Access Memory.
Chaudhary M, Shih YC, Tang SY, Yang TY, Kuo TW, Chung CC, Shen YC, Anbalagan AK, Lee CH, Hou TH, He JH, Chueh YL. Chaudhary M, et al. Among authors: hou th. ACS Appl Mater Interfaces. 2023 Jul 19;15(28):33858-33867. doi: 10.1021/acsami.3c05384. Epub 2023 Jul 10. ACS Appl Mater Interfaces. 2023. PMID: 37428508
37 results