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InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study.
Nanotechnology. 2014 Nov 14;25(45):455501. doi: 10.1088/0957-4484/25/45/455501. Epub 2014 Oct 20.
Nanotechnology. 2014.
PMID: 25327948
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.
Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E, Pangrác J.
Hazdra P, et al. Among authors: hospodkova a.
J Nanosci Nanotechnol. 2011 Aug;11(8):6804-9. doi: 10.1166/jnn.2011.4223.
J Nanosci Nanotechnol. 2011.
PMID: 22103083
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Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.
Hospodková A, Čížek J, Hájek F, Hubáček T, Pangrác J, Dominec F, Kuldová K, Batysta J, Liedke MO, Hirschmann E, Butterling M, Wagner A.
Hospodková A, et al.
Materials (Basel). 2022 Oct 5;15(19):6916. doi: 10.3390/ma15196916.
Materials (Basel). 2022.
PMID: 36234257
Free PMC article.
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Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A, Hájek F, Hubáček T, Gedeonová Z, Hubík P, Hývl M, Pangrác J, Dominec F, Košutová T.
Hospodková A, et al.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19646-19652. doi: 10.1021/acsami.3c00799. Epub 2023 Apr 6.
ACS Appl Mater Interfaces. 2023.
PMID: 37022802
Free PMC article.
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Picosecond and millisecond dynamics of photoexcited carriers in porous silicon.
Mal P, Trojánek F, Kudrna J, Hospodková A, Banás S, Kohlová V V, Valenta J, Pelant I I.
Mal P, et al. Among authors: hospodkova a.
Phys Rev B Condens Matter. 1996 Sep 15;54(11):7929-7936. doi: 10.1103/physrevb.54.7929.
Phys Rev B Condens Matter. 1996.
PMID: 9984469
No abstract available.
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