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Atomically thin MoS₂: a new direct-gap semiconductor.
Mak KF, Lee C, Hone J, Shan J, Heinz TF. Mak KF, et al. Among authors: hone j. Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805. Epub 2010 Sep 24. Phys Rev Lett. 2010. PMID: 21230799
Temperature-dependent transport in suspended graphene.
Bolotin KI, Sikes KJ, Hone J, Stormer HL, Kim P. Bolotin KI, et al. Among authors: hone j. Phys Rev Lett. 2008 Aug 29;101(9):096802. doi: 10.1103/PhysRevLett.101.096802. Epub 2008 Aug 25. Phys Rev Lett. 2008. PMID: 18851636
339 results