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2008 | 1 |
2020 | 4 |
2021 | 2 |
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jeong yu
(447 results)?
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system.
Sci Rep. 2021 Aug 16;11(1):16601. doi: 10.1038/s41598-021-96197-8.
Sci Rep. 2021.
PMID: 34400734
Free PMC article.
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing.
Yang J, Cho H, Ryu H, Ismail M, Mahata C, Kim S.
Yang J, et al. Among authors: ryu h.
ACS Appl Mater Interfaces. 2021 Jul 21;13(28):33244-33252. doi: 10.1021/acsami.1c06618. Epub 2021 Jul 12.
ACS Appl Mater Interfaces. 2021.
PMID: 34251796
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Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.
Ryu H, Kim S.
Ryu H, et al.
Nanomaterials (Basel). 2020 Dec 9;10(12):2462. doi: 10.3390/nano10122462.
Nanomaterials (Basel). 2020.
PMID: 33317045
Free PMC article.
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Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device.
Ryu H, Kim S.
Ryu H, et al.
Nanomaterials (Basel). 2020 Oct 29;10(11):2159. doi: 10.3390/nano10112159.
Nanomaterials (Basel). 2020.
PMID: 33138118
Free PMC article.
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Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack.
Ryu H, Kim S.
Ryu H, et al.
Nanomaterials (Basel). 2020 Oct 18;10(10):2055. doi: 10.3390/nano10102055.
Nanomaterials (Basel). 2020.
PMID: 33080978
Free PMC article.
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Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications.
Ryu H, Kim S.
Ryu H, et al.
Nanomaterials (Basel). 2020 Aug 7;10(8):1550. doi: 10.3390/nano10081550.
Nanomaterials (Basel). 2020.
PMID: 32784590
Free PMC article.
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Influence of surface roughness on the polarimetric characteristics of a wire-grid grating polarizer.
Ryu H, Joon Yoon S, Kim D.
Ryu H, et al.
Appl Opt. 2008 Oct 20;47(30):5715-21. doi: 10.1364/ao.47.005715.
Appl Opt. 2008.
PMID: 18936821
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