Hinkle CL - Search Results

1

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, Wallace RM, Hinkle CL. Yue R, et al. Among authors: hinkle cl. ACS Nano. 2015 Jan 27;9(1):474-80. doi: 10.1021/nn5056496. Epub 2014 Dec 22. ACS Nano. 2015. PMID: 25496648

2

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

McDonnell S, Brennan B, Azcatl A, Lu N, Dong H, Buie C, Kim J, Hinkle CL, Kim MJ, Wallace RM. McDonnell S, et al. Among authors: hinkle cl. ACS Nano. 2013 Nov 26;7(11):10354-61. doi: 10.1021/nn404775u. Epub 2013 Oct 17. ACS Nano. 2013. PMID: 24116949

3

Defect-dominated doping and contact resistance in MoS2.

McDonnell S, Addou R, Buie C, Wallace RM, Hinkle CL. McDonnell S, et al. Among authors: hinkle cl. ACS Nano. 2014 Mar 25;8(3):2880-8. doi: 10.1021/nn500044q. Epub 2014 Feb 6. ACS Nano. 2014. PMID: 24484444

4

Silicon interfacial passivation layer chemistry for high-k/InP interfaces.

Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM. Dong H, et al. Among authors: hinkle cl. ACS Appl Mater Interfaces. 2014 May 28;6(10):7340-5. doi: 10.1021/am500752u. Epub 2014 Apr 30. ACS Appl Mater Interfaces. 2014. PMID: 24750024

5

Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, Wang J, Zhu H, Hinkle CL, Quevedo-Lopez M, Alshareef HN, Colombo L, Hsu JW, Wallace RM. Addou R, et al. Among authors: hinkle cl. ACS Nano. 2015 Sep 22;9(9):9124-33. doi: 10.1021/acsnano.5b03309. Epub 2015 Aug 27. ACS Nano. 2015. PMID: 26301428

6

MoS2-Titanium Contact Interface Reactions.

McDonnell S, Smyth C, Hinkle CL, Wallace RM. McDonnell S, et al. Among authors: hinkle cl. ACS Appl Mater Interfaces. 2016 Mar;8(12):8289-94. doi: 10.1021/acsami.6b00275. Epub 2016 Mar 21. ACS Appl Mater Interfaces. 2016. PMID: 26967016

7

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Azcatl A, et al. Among authors: hinkle cl. Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9. Nano Lett. 2016. PMID: 27494551

8

Probing Interface Defects in Top-Gated MoS₂ Transistors with Impedance Spectroscopy.

Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young CD. Zhao P, et al. Among authors: hinkle cl. ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24348-24356. doi: 10.1021/acsami.7b06204. Epub 2017 Jul 6. ACS Appl Mater Interfaces. 2017. PMID: 28650155

9

Schottky Barrier Height of Pd/MoS₂ Contact by Large Area Photoemission Spectroscopy.

Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang W, Hinkle CL, Wallace RM. Dong H, et al. Among authors: hinkle cl. ACS Appl Mater Interfaces. 2017 Nov 8;9(44):38977-38983. doi: 10.1021/acsami.7b10974. Epub 2017 Oct 25. ACS Appl Mater Interfaces. 2017. PMID: 29035026

10

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi₂Se₃.

Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA Jr, McDonnell S, Vandenberghe WG, Wallace RM, Diebold A, Hinkle CL. Walsh LA, et al. Among authors: hinkle cl. ACS Nano. 2018 Jun 26;12(6):6310-6318. doi: 10.1021/acsnano.8b03414. Epub 2018 Jun 8. ACS Nano. 2018. PMID: 29874037

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