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Direct observation of a noncatalytic growth regime for GaAs nanowires.
Nano Lett. 2011 Sep 14;11(9):3848-54. doi: 10.1021/nl2019382. Epub 2011 Aug 15.
Nano Lett. 2011.
PMID: 21823601
Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires.
Rudolph D, Funk S, Döblinger M, Morkötter S, Hertenberger S, Schweickert L, Becker J, Matich S, Bichler M, Spirkoska D, Zardo I, Finley JJ, Abstreiter G, Koblmüller G.
Rudolph D, et al. Among authors: hertenberger s.
Nano Lett. 2013 Apr 10;13(4):1522-7. doi: 10.1021/nl3046816. Epub 2013 Mar 27.
Nano Lett. 2013.
PMID: 23517063
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E(1)(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scattering.
Zardo I, Yazji S, Hörmann N, Hertenberger S, Funk S, Mangialardo S, Morkötter S, Koblmüller G, Postorino P, Abstreiter G.
Zardo I, et al. Among authors: hertenberger s.
Nano Lett. 2013 Jul 10;13(7):3011-6. doi: 10.1021/nl304528j. Epub 2013 Jun 6.
Nano Lett. 2013.
PMID: 23701454
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Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.
Brenneis A, Overbeck J, Treu J, Hertenberger S, Morkötter S, Döblinger M, Finley JJ, Abstreiter G, Koblmüller G, Holleitner AW.
Brenneis A, et al. Among authors: hertenberger s.
ACS Nano. 2015 Oct 27;9(10):9849-58. doi: 10.1021/acsnano.5b03017. Epub 2015 Sep 11.
ACS Nano. 2015.
PMID: 26348461
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Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
Koblmüller G, Hertenberger S, Vizbaras K, Bichler M, Bao F, Zhang JP, Abstreiter G.
Koblmüller G, et al. Among authors: hertenberger s.
Nanotechnology. 2010 Sep 10;21(36):365602. doi: 10.1088/0957-4484/21/36/365602. Epub 2010 Aug 12.
Nanotechnology. 2010.
PMID: 20702932
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Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability.
Hertenberger S, Rudolph D, Becker J, Bichler M, Finley JJ, Abstreiter G, Koblmüller G.
Hertenberger S, et al.
Nanotechnology. 2012 Jun 15;23(23):235602. doi: 10.1088/0957-4484/23/23/235602. Epub 2012 May 17.
Nanotechnology. 2012.
PMID: 22595881
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Pressure dependence of Raman spectrum in InAs nanowires.
Yazji S, Zardo I, Hertenberger S, Morkötter S, Koblmüller G, Abstreiter G, Postorino P.
Yazji S, et al. Among authors: hertenberger s.
J Phys Condens Matter. 2014 Jun 11;26(23):235301. doi: 10.1088/0953-8984/26/23/235301.
J Phys Condens Matter. 2014.
PMID: 25932470
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