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GeSnOI mid-infrared laser technology.
Wang B, Sakat E, Herth E, Gromovyi M, Bjelajac A, Chaste J, Patriarche G, Boucaud P, Boeuf F, Pauc N, Calvo V, Chrétien J, Frauenrath M, Chelnokov A, Reboud V, Hartmann JM, El Kurdi M. Wang B, et al. Among authors: hartmann jm. Light Sci Appl. 2021 Nov 17;10(1):232. doi: 10.1038/s41377-021-00675-7. Light Sci Appl. 2021. PMID: 34785641 Free PMC article.
Germanium avalanche receiver for low power interconnects.
Virot L, Crozat P, Fédéli JM, Hartmann JM, Marris-Morini D, Cassan E, Boeuf F, Vivien L. Virot L, et al. Among authors: hartmann jm. Nat Commun. 2014 Sep 18;5:4957. doi: 10.1038/ncomms5957. Nat Commun. 2014. PMID: 25232823 Free article.
GeSn heterostructure micro-disk laser operating at 230 K.
Thai QM, Pauc N, Aubin J, Bertrand M, Chrétien J, Delaye V, Chelnokov A, Hartmann JM, Reboud V, Calvo V. Thai QM, et al. Among authors: hartmann jm. Opt Express. 2018 Dec 10;26(25):32500-32508. doi: 10.1364/OE.26.032500. Opt Express. 2018. PMID: 30645416 Free article.
Lasing in strained germanium microbridges.
Armand Pilon FT, Lyasota A, Niquet YM, Reboud V, Calvo V, Pauc N, Widiez J, Bonzon C, Hartmann JM, Chelnokov A, Faist J, Sigg H. Armand Pilon FT, et al. Among authors: hartmann jm. Nat Commun. 2019 Jun 20;10(1):2724. doi: 10.1038/s41467-019-10655-6. Nat Commun. 2019. PMID: 31222017 Free PMC article.
Impact and behavior of Sn during the Ni/GeSn solid-state reaction.
Quintero A, Gergaud P, Hartmann JM, Delaye V, Reboud V, Cassan E, Rodriguez P. Quintero A, et al. Among authors: hartmann jm. J Appl Crystallogr. 2020 Apr 14;53(Pt 3):605-613. doi: 10.1107/S1600576720003064. eCollection 2020 Jun 1. J Appl Crystallogr. 2020. PMID: 32684875 Free PMC article.
Microstructuring to Improve the Thermal Stability of GeSn Layers.
Bonino V, Pauc N, Calvo V, Frauenrath M, Hartmann JM, Chelnokov A, Reboud V, Rosenthal M, Segura-Ruiz J. Bonino V, et al. Among authors: hartmann jm. ACS Appl Mater Interfaces. 2022 May 18;14(19):22270-22277. doi: 10.1021/acsami.2c01652. Epub 2022 May 5. ACS Appl Mater Interfaces. 2022. PMID: 35510890
Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction.
Virot L, Benedikovic D, Szelag B, Alonso-Ramos C, Karakus B, Hartmann JM, Le Roux X, Crozat P, Cassan E, Marris-Morini D, Baudot C, Boeuf F, Fédéli JM, Kopp C, Vivien L. Virot L, et al. Among authors: hartmann jm. Opt Express. 2017 Aug 7;25(16):19487-19496. doi: 10.1364/OE.25.019487. Opt Express. 2017. PMID: 29041142 Free article.
SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.
Mastari M, Charles M, Bogumilowicz Y, Thai QM, Pimenta-Barros P, Argoud M, Papon AM, Gergaud P, Landru D, Kim Y, Hartmann JM. Mastari M, et al. Among authors: hartmann jm. Nanotechnology. 2018 Jul 6;29(27):275702. doi: 10.1088/1361-6528/aabdca. Epub 2018 Apr 12. Nanotechnology. 2018. PMID: 29648544
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.
von den Driesch N, Stange D, Rainko D, Povstugar I, Zaumseil P, Capellini G, Schröder T, Denneulin T, Ikonic Z, Hartmann JM, Sigg H, Mantl S, Grützmacher D, Buca D. von den Driesch N, et al. Among authors: hartmann jm. Adv Sci (Weinh). 2018 Mar 27;5(6):1700955. doi: 10.1002/advs.201700955. eCollection 2018 Jun. Adv Sci (Weinh). 2018. PMID: 29938172 Free PMC article.
Quantitative analysis of Si/SiGeC superlattices using atom probe tomography.
Estivill R, Grenier A, Duguay S, Vurpillot F, Terlier T, Barnes JP, Hartmann JM, Blavette D. Estivill R, et al. Among authors: hartmann jm. Ultramicroscopy. 2015 Dec;159 Pt 2:223-31. doi: 10.1016/j.ultramic.2015.03.014. Epub 2015 Mar 18. Ultramicroscopy. 2015. PMID: 25814020
91 results