Groiss H - Search Results

1

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.

Lancaster S, Groiss H, Zederbauer T, Andrews AM, MacFarland D, Schrenk W, Strasser G, Detz H. Lancaster S, et al. Among authors: groiss h. Nanotechnology. 2019 Feb 8;30(6):065602. doi: 10.1088/1361-6528/aaf11e. Nanotechnology. 2019. PMID: 30523852

2

Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.

Brehm M, Groiss H, Bauer G, Gerthsen D, Clarke R, Paltiel Y, Yacoby Y. Brehm M, et al. Among authors: groiss h. Nanotechnology. 2015 Dec 4;26(48):485702. doi: 10.1088/0957-4484/26/48/485702. Epub 2015 Nov 10. Nanotechnology. 2015. PMID: 26553384

3

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G. Hackl F, et al. Among authors: groiss h. Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11. Nanotechnology. 2011. PMID: 21393825

4

Strain relief and shape oscillations in site-controlled coherent SiGe islands.

Hrauda N, Zhang JJ, Groiss H, Etzelstorfer T, Holý V, Bauer G, Deiter C, Seeck OH, Stangl J. Hrauda N, et al. Among authors: groiss h. Nanotechnology. 2013 Aug 23;24(33):335707. doi: 10.1088/0957-4484/24/33/335707. Epub 2013 Jul 26. Nanotechnology. 2013. PMID: 23892543

5

Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature.

Hassan M, Springholz G, Lechner RT, Groiss H, Kirchschlager R, Bauer G. Hassan M, et al. Among authors: groiss h. J Cryst Growth. 2011 May 15;323(1):363-367. doi: 10.1016/j.jcrysgro.2010.10.135. J Cryst Growth. 2011. PMID: 21776175 Free PMC article.

6

Galvanic Exchange in Colloidal Metal/Metal-Oxide Core/Shell Nanocrystals.

Kriegner D, Sytnyk M, Groiss H, Yarema M, Grafeneder W, Walter P, Dippel AC, Meffert M, Gerthsen D, Stangl J, Heiss W. Kriegner D, et al. Among authors: groiss h. J Phys Chem C Nanomater Interfaces. 2016 Sep 8;120(35):19848-19855. doi: 10.1021/acs.jpcc.6b06405. Epub 2016 Aug 15. J Phys Chem C Nanomater Interfaces. 2016. PMID: 27635186 Free PMC article.

7

Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing.

Zhang JJ, Montalenti F, Rastelli A, Hrauda N, Scopece D, Groiss H, Stangl J, Pezzoli F, Schäffler F, Schmidt OG, Miglio L, Bauer G. Zhang JJ, et al. Among authors: groiss h. Phys Rev Lett. 2010 Oct 15;105(16):166102. doi: 10.1103/PhysRevLett.105.166102. Epub 2010 Oct 12. Phys Rev Lett. 2010. PMID: 21230984 Free article.

8

Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Grydlik M, Hackl F, Groiss H, Glaser M, Halilovic A, Fromherz T, Jantsch W, Schäffler F, Brehm M. Grydlik M, et al. Among authors: groiss h. ACS Photonics. 2016 Feb 17;3(2):298-303. doi: 10.1021/acsphotonics.5b00671. Epub 2016 Jan 26. ACS Photonics. 2016. PMID: 26937421 Free PMC article.

9

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots.

Schuster J, Aberl J, Vukušić L, Spindlberger L, Groiss H, Fromherz T, Brehm M, Schäffler F. Schuster J, et al. Among authors: groiss h. Sci Rep. 2021 Oct 18;11(1):20597. doi: 10.1038/s41598-021-99966-7. Sci Rep. 2021. PMID: 34663889 Free PMC article.

10

Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge_1-xSn_x epilayers.

Groiss H, Glaser M, Schatzl M, Brehm M, Gerthsen D, Roth D, Bauer P, Schäffler F. Groiss H, et al. Sci Rep. 2017 Nov 23;7(1):16114. doi: 10.1038/s41598-017-16356-8. Sci Rep. 2017. PMID: 29170483 Free PMC article.

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