Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure.
Ahmad MA, Kumar P, Mech BC, Kumar J.
Ahmad MA, et al.
Sci Rep. 2024 May 3;14(1):10218. doi: 10.1038/s41598-024-59908-5.
Sci Rep. 2024.
PMID: 38702353
Free PMC article.
A detailed exploration is conducted through an atomistic p(z) orbital model, derived from the Hamiltonian of graphene nanoribbons, employing the nonequilibrium Green's function formalism (NEGF) for analysis. The atomic characteristics of the GNRFETs channel are accu …
A detailed exploration is conducted through an atomistic p(z) orbital model, derived from the Hamiltonian of graphene nanoribbons, employing …