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Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications.
ACS Appl Mater Interfaces. 2015 Mar 11;7(9):5471-9. doi: 10.1021/am5091726. Epub 2015 Mar 2.
ACS Appl Mater Interfaces. 2015.
PMID: 25695205
Heterointerface engineering of broken-gap InAs/GaSb multilayer structures.
Liu JS, Zhu Y, Goley PS, Hudait MK.
Liu JS, et al. Among authors: goley ps.
ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2512-7. doi: 10.1021/am507410b. Epub 2015 Jan 21.
ACS Appl Mater Interfaces. 2015.
PMID: 25568961
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Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.
Hudait MK, Clavel M, Goley PS, Xie Y, Heremans JJ.
Hudait MK, et al. Among authors: goley ps.
ACS Appl Mater Interfaces. 2015 Oct 14;7(40):22315-21. doi: 10.1021/acsami.5b05814. Epub 2015 Oct 5.
ACS Appl Mater Interfaces. 2015.
PMID: 26413844
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Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.
Clavel M, Saladukha D, Goley PS, Ochalski TJ, Murphy-Armando F, Bodnar RJ, Hudait MK.
Clavel M, et al. Among authors: goley ps.
ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26470-81. doi: 10.1021/acsami.5b07385. Epub 2015 Nov 23.
ACS Appl Mater Interfaces. 2015.
PMID: 26561963
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Germanium Based Field-Effect Transistors: Challenges and Opportunities.
Goley PS, Hudait MK.
Goley PS, et al.
Materials (Basel). 2014 Mar 19;7(3):2301-2339. doi: 10.3390/ma7032301.
Materials (Basel). 2014.
PMID: 28788569
Free PMC article.
Review.
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Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors.
Hudait MK, Clavel M, Goley P, Jain N, Zhu Y.
Hudait MK, et al.
Sci Rep. 2014 Nov 7;4:6964. doi: 10.1038/srep06964.
Sci Rep. 2014.
PMID: 25376723
Free PMC article.
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