Gehring P - Search Results

1

Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons.

Niu W, Sopp S, Lodi A, Gee A, Kong F, Pei T, Gehring P, Nägele J, Lau CS, Ma J, Liu J, Narita A, Mol J, Burghard M, Müllen K, Mai Y, Feng X, Bogani L. Niu W, et al. Among authors: gehring p. Nat Mater. 2023 Feb;22(2):180-185. doi: 10.1038/s41563-022-01460-6. Epub 2023 Feb 2. Nat Mater. 2023. PMID: 36732344 Free PMC article.

2

Ground-State Spin Blockade in a Single-Molecule Junction.

de Bruijckere J, Gehring P, Palacios-Corella M, Clemente-León M, Coronado E, Paaske J, Hedegård P, van der Zant HSJ. de Bruijckere J, et al. Among authors: gehring p. Phys Rev Lett. 2019 May 17;122(19):197701. doi: 10.1103/PhysRevLett.122.197701. Phys Rev Lett. 2019. PMID: 31144938

3

Magnetic-Field Universality of the Kondo Effect Revealed by Thermocurrent Spectroscopy.

Hsu C, Costi TA, Vogel D, Wegeberg C, Mayor M, van der Zant HSJ, Gehring P. Hsu C, et al. Among authors: gehring p. Phys Rev Lett. 2022 Apr 8;128(14):147701. doi: 10.1103/PhysRevLett.128.147701. Phys Rev Lett. 2022. PMID: 35476482

4

Growth of high-mobility Bi2Te2Se nanoplatelets on hBN sheets by van der Waals epitaxy.

Gehring P, Gao BF, Burghard M, Kern K. Gehring P, et al. Nano Lett. 2012 Oct 10;12(10):5137-42. doi: 10.1021/nl3019802. Epub 2012 Sep 24. Nano Lett. 2012. PMID: 22985022

5

A natural topological insulator.

Gehring P, Benia HM, Weng Y, Dinnebier R, Ast CR, Burghard M, Kern K. Gehring P, et al. Nano Lett. 2013 Mar 13;13(3):1179-84. doi: 10.1021/nl304583m. Epub 2013 Mar 1. Nano Lett. 2013. PMID: 23438015

6

Dimensional crossover in the quantum transport behaviour of the natural topological insulator Aleksite.

Gehring P, Vaklinova K, Hoyer A, Benia HM, Skakalova V, Argentero G, Eder F, Meyer JC, Burghard M, Kern K. Gehring P, et al. Sci Rep. 2015 Jun 29;5:11691. doi: 10.1038/srep11691. Sci Rep. 2015. PMID: 26118383 Free PMC article.

7

Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping.

Devender, Gehring P, Gaul A, Hoyer A, Vaklinova K, Mehta RJ, Burghard M, Borca-Tasciuc T, Singh DJ, Kern K, Ramanath G. Devender, et al. Among authors: gehring p. Adv Mater. 2016 Aug;28(30):6436-41. doi: 10.1002/adma.201601256. Epub 2016 May 11. Adv Mater. 2016. PMID: 27167512

8

Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets.

Gehring P, Reusch FB, Mashhadi SS, Burghard M, Kern K. Gehring P, et al. Nanotechnology. 2016 Jul 15;27(28):285201. doi: 10.1088/0957-4484/27/28/285201. Epub 2016 Jun 3. Nanotechnology. 2016. PMID: 27257792

9

Quantum Interference in Graphene Nanoconstrictions.

Gehring P, Sadeghi H, Sangtarash S, Lau CS, Liu J, Ardavan A, Warner JH, Lambert CJ, Briggs GA, Mol JA. Gehring P, et al. Nano Lett. 2016 Jul 13;16(7):4210-6. doi: 10.1021/acs.nanolett.6b01104. Epub 2016 Jun 15. Nano Lett. 2016. PMID: 27295198

10

Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors.

Gehring P, Sowa JK, Cremers J, Wu Q, Sadeghi H, Sheng Y, Warner JH, Lambert CJ, Briggs GAD, Mol JA. Gehring P, et al. ACS Nano. 2017 Jun 27;11(6):5325-5331. doi: 10.1021/acsnano.7b00570. Epub 2017 Apr 21. ACS Nano. 2017. PMID: 28423272 Free PMC article.

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