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Amino-Termination of Silicon Carbide Nanoparticles.
Czene S, Jegenyes N, Krafcsik O, Lenk S, Czigány Z, Bortel G, Kamarás K, Rohonczy J, Beke D, Gali A. Czene S, et al. Among authors: gali a. Nanomaterials (Basel). 2023 Jun 27;13(13):1953. doi: 10.3390/nano13131953. Nanomaterials (Basel). 2023. PMID: 37446469 Free PMC article.
Divacancy in 4H-SiC.
Son NT, Carlsson P, ul Hassan J, Janzén E, Umeda T, Isoya J, Gali A, Bockstedte M, Morishita N, Ohshima T, Itoh H. Son NT, et al. Among authors: gali a. Phys Rev Lett. 2006 Feb 10;96(5):055501. doi: 10.1103/PhysRevLett.96.055501. Epub 2006 Feb 6. Phys Rev Lett. 2006. PMID: 16486945
Identification of the carbon antisite-vacancy pair in 4H-SiC.
Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N, Itoh H, Gali A, Bockstedte M. Umeda T, et al. Among authors: gali a. Phys Rev Lett. 2006 Apr 14;96(14):145501. doi: 10.1103/PhysRevLett.96.145501. Epub 2006 Apr 10. Phys Rev Lett. 2006. PMID: 16712089 Free article.
Readout and control of a single nuclear spin with a metastable electron spin ancilla.
Lee SY, Widmann M, Rendler T, Doherty MW, Babinec TM, Yang S, Eyer M, Siyushev P, Hausmann BJ, Loncar M, Bodrog Z, Gali A, Manson NB, Fedder H, Wrachtrup J. Lee SY, et al. Among authors: gali a. Nat Nanotechnol. 2013 Jul;8(7):487-92. doi: 10.1038/nnano.2013.104. Epub 2013 Jun 23. Nat Nanotechnol. 2013. PMID: 23793305
First principles study of point defects in SnS.
Malone BD, Gali A, Kaxiras E. Malone BD, et al. Among authors: gali a. Phys Chem Chem Phys. 2014 Dec 21;16(47):26176-83. doi: 10.1039/c4cp03010a. Epub 2014 Nov 3. Phys Chem Chem Phys. 2014. PMID: 25363023
130 results