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Controlled Surface Modification to Revive Shallow NV- Centers.
Neethirajan JN, Hache T, Paone D, Pinto D, Denisenko A, Stöhr R, Udvarhelyi P, Pershin A, Gali A, Wrachtrup J, Kern K, Singha A. Neethirajan JN, et al. Among authors: gali a. Nano Lett. 2023 Apr 12;23(7):2563-2569. doi: 10.1021/acs.nanolett.2c04733. Epub 2023 Mar 16. Nano Lett. 2023. PMID: 36927005 Free PMC article.
First principles study of point defects in SnS.
Malone BD, Gali A, Kaxiras E. Malone BD, et al. Among authors: gali a. Phys Chem Chem Phys. 2014 Dec 21;16(47):26176-83. doi: 10.1039/c4cp03010a. Epub 2014 Nov 3. Phys Chem Chem Phys. 2014. PMID: 25363023
Divacancy in 4H-SiC.
Son NT, Carlsson P, ul Hassan J, Janzén E, Umeda T, Isoya J, Gali A, Bockstedte M, Morishita N, Ohshima T, Itoh H. Son NT, et al. Among authors: gali a. Phys Rev Lett. 2006 Feb 10;96(5):055501. doi: 10.1103/PhysRevLett.96.055501. Epub 2006 Feb 6. Phys Rev Lett. 2006. PMID: 16486945
Identification of the carbon antisite-vacancy pair in 4H-SiC.
Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N, Itoh H, Gali A, Bockstedte M. Umeda T, et al. Among authors: gali a. Phys Rev Lett. 2006 Apr 14;96(14):145501. doi: 10.1103/PhysRevLett.96.145501. Epub 2006 Apr 10. Phys Rev Lett. 2006. PMID: 16712089 Free article.
Coherent control of single spins in silicon carbide at room temperature.
Widmann M, Lee SY, Rendler T, Son NT, Fedder H, Paik S, Yang LP, Zhao N, Yang S, Booker I, Denisenko A, Jamali M, Momenzadeh SA, Gerhardt I, Ohshima T, Gali A, Janzén E, Wrachtrup J. Widmann M, et al. Among authors: gali a. Nat Mater. 2015 Feb;14(2):164-8. doi: 10.1038/nmat4145. Epub 2014 Dec 1. Nat Mater. 2015. PMID: 25437256
130 results