Eichfeld SM - Search Results

1

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, Fölsch S, Feenstra RM, Wallace RM, Cho K, Fullerton-Shirey SK, Redwing JM, Robinson JA. Lin YC, et al. Among authors: eichfeld sm. ACS Nano. 2018 Feb 27;12(2):965-975. doi: 10.1021/acsnano.7b07059. Epub 2018 Jan 23. ACS Nano. 2018. PMID: 29360349

2

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.

Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, Redwing JM, Robinson JA. Eichfeld SM, et al. ACS Nano. 2015 Feb 24;9(2):2080-7. doi: 10.1021/nn5073286. Epub 2015 Feb 2. ACS Nano. 2015. PMID: 25625184

3

Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers.

Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Park JH, et al. Among authors: eichfeld sm. ACS Nano. 2016 Apr 26;10(4):4258-67. doi: 10.1021/acsnano.5b07698. Epub 2016 Mar 24. ACS Nano. 2016. PMID: 26991824

4

In situ axially doped n-channel silicon nanowire field-effect transistors.

Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. Ho TT, et al. Nano Lett. 2008 Dec;8(12):4359-64. doi: 10.1021/nl8022059. Nano Lett. 2008. PMID: 19367848

5

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.

Lin YC, Ghosh RK, Addou R, Lu N, Eichfeld SM, Zhu H, Li MY, Peng X, Kim MJ, Li LJ, Wallace RM, Datta S, Robinson JA. Lin YC, et al. Among authors: eichfeld sm. Nat Commun. 2015 Jun 19;6:7311. doi: 10.1038/ncomms8311. Nat Commun. 2015. PMID: 26088295 Free PMC article.

6

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GR, Eichfeld SM, Burke RA, Shah PB, O'Regan TP, Crowne FJ, Birdwell AG, Robinson JA, Davydov AV, Ivanov TG. Ruzmetov D, et al. Among authors: eichfeld sm. ACS Nano. 2016 Mar 22;10(3):3580-8. doi: 10.1021/acsnano.5b08008. Epub 2016 Feb 19. ACS Nano. 2016. PMID: 26866442

7

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Lin YC, Li J, de la Barrera SC, Eichfeld SM, Nie Y, Addou R, Mende PC, Wallace RM, Cho K, Feenstra RM, Robinson JA. Lin YC, et al. Among authors: eichfeld sm. Nanoscale. 2016 Apr 28;8(16):8947-54. doi: 10.1039/c6nr01902a. Nanoscale. 2016. PMID: 27073972

8

Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.

Azizi A, Eichfeld S, Geschwind G, Zhang K, Jiang B, Mukherjee D, Hossain L, Piasecki AF, Kabius B, Robinson JA, Alem N. Azizi A, et al. ACS Nano. 2015 May 26;9(5):4882-90. doi: 10.1021/acsnano.5b01677. Epub 2015 May 1. ACS Nano. 2015. PMID: 25885122

9

Two-dimensional gallium nitride realized via graphene encapsulation.

Al Balushi ZY, Wang K, Ghosh RK, Vilá RA, Eichfeld SM, Caldwell JD, Qin X, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, Robinson JA. Al Balushi ZY, et al. Among authors: eichfeld sm. Nat Mater. 2016 Nov;15(11):1166-1171. doi: 10.1038/nmat4742. Epub 2016 Aug 29. Nat Mater. 2016. PMID: 27571451

10

Dislocation driven spiral and non-spiral growth in layered chalcogenides.

Nie Y , Barton AT , Addou R , Zheng Y , Walsh LA , Eichfeld SM , Yue R , Cormier CR , Zhang C , Wang Q , Liang C , Robinson JA , Kim M , Vandenberghe W , Colombo L , Cha PR , Wallace RM , Hinkle CL , Cho K . Nie Y , et al. Among authors: eichfeld sm. Nanoscale. 2018 Aug 9;10(31):15023-15034. doi: 10.1039/c8nr02280a. Nanoscale. 2018. PMID: 30052245

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