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Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.
Sreepal V, Yagmurcukardes M, Vasu KS, Kelly DJ, Taylor SFR, Kravets VG, Kudrynskyi Z, Kovalyuk ZD, Patanè A, Grigorenko AN, Haigh SJ, Hardacre C, Eaves L, Sahin H, Geim AK, Peeters FM, Nair RR. Sreepal V, et al. Among authors: eaves l. Nano Lett. 2019 Sep 11;19(9):6475-6481. doi: 10.1021/acs.nanolett.9b02700. Epub 2019 Aug 26. Nano Lett. 2019. PMID: 31426634 Free PMC article.
Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.
Kudrynskyi ZR, Bhuiyan MA, Makarovsky O, Greener JDG, Vdovin EE, Kovalyuk ZD, Cao Y, Mishchenko A, Novoselov KS, Beton PH, Eaves L, Patanè A. Kudrynskyi ZR, et al. Among authors: eaves l. Phys Rev Lett. 2017 Oct 13;119(15):157701. doi: 10.1103/PhysRevLett.119.157701. Epub 2017 Oct 10. Phys Rev Lett. 2017. PMID: 29077458
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.
Bandurin DA, Tyurnina AV, Yu GL, Mishchenko A, Zólyomi V, Morozov SV, Kumar RK, Gorbachev RV, Kudrynskyi ZR, Pezzini S, Kovalyuk ZD, Zeitler U, Novoselov KS, Patanè A, Eaves L, Grigorieva IV, Fal'ko VI, Geim AK, Cao Y. Bandurin DA, et al. Among authors: eaves l. Nat Nanotechnol. 2017 Mar;12(3):223-227. doi: 10.1038/nnano.2016.242. Epub 2016 Nov 21. Nat Nanotechnol. 2017. PMID: 27870843
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
Mudd GW, Svatek SA, Ren T, Patanè A, Makarovsky O, Eaves L, Beton PH, Kovalyuk ZD, Lashkarev GV, Kudrynskyi ZR, Dmitriev AI. Mudd GW, et al. Among authors: eaves l. Adv Mater. 2013 Oct 25;25(40):5714-8. doi: 10.1002/adma.201302616. Epub 2013 Aug 21. Adv Mater. 2013. PMID: 23966225 Free PMC article.
Electron tunneling through ultrathin boron nitride crystalline barriers.
Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Katsnelson MI, Eaves L, Morozov SV, Mayorov AS, Peres NM, Neto AH, Leist J, Geim AK, Ponomarenko LA, Novoselov KS. Britnell L, et al. Among authors: eaves l. Nano Lett. 2012 Mar 14;12(3):1707-10. doi: 10.1021/nl3002205. Epub 2012 Mar 1. Nano Lett. 2012. PMID: 22380756
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
Vdovin EE, Mishchenko A, Greenaway MT, Zhu MJ, Ghazaryan D, Misra A, Cao Y, Morozov SV, Makarovsky O, Fromhold TM, Patanè A, Slotman GJ, Katsnelson MI, Geim AK, Novoselov KS, Eaves L. Vdovin EE, et al. Among authors: eaves l. Phys Rev Lett. 2016 May 6;116(18):186603. doi: 10.1103/PhysRevLett.116.186603. Epub 2016 May 5. Phys Rev Lett. 2016. PMID: 27203338
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