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Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes.
Sensors (Basel). 2023 Feb 17;23(4):2282. doi: 10.3390/s23042282.
Sensors (Basel). 2023.
PMID: 36850880
Free PMC article.
GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization.
Paulauskas T, Pačebutas V, Geižutis A, Stanionytė S, Dudutienė E, Skapas M, Naujokaitis A, Strazdienė V, Čechavičius B, Čaplovičová M, Vretenár V, Jakieła R, Krotkus A.
Paulauskas T, et al. Among authors: dudutiene e.
Sci Rep. 2020 Feb 6;10(1):2002. doi: 10.1038/s41598-020-58812-y.
Sci Rep. 2020.
PMID: 32029827
Free PMC article.
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Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers.
Pūkienė S, Karaliūnas M, Jasinskas A, Dudutienė E, Čechavičius B, Devenson J, Butkutė R, Udal A, Valušis G.
Pūkienė S, et al. Among authors: dudutiene e.
Nanotechnology. 2019 Nov 8;30(45):455001. doi: 10.1088/1361-6528/ab36f3. Epub 2019 Jul 30.
Nanotechnology. 2019.
PMID: 31362278
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