Dubrovskii VG - Search Results

1

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory.

Gridchin VO, Dvoretckaia LN, Kotlyar KP, Reznik RR, Parfeneva AV, Dragunova AS, Kryzhanovskaya NV, Dubrovskii VG, Cirlin GE. Gridchin VO, et al. Among authors: dubrovskii vg. Nanomaterials (Basel). 2022 Jul 8;12(14):2341. doi: 10.3390/nano12142341. Nanomaterials (Basel). 2022. PMID: 35889566 Free PMC article.

2

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

Dubrovskii VG, Sibirev NV, Cirlin GE, Harmand JC, Ustinov VM. Dubrovskii VG, et al. Phys Rev E Stat Nonlin Soft Matter Phys. 2006 Feb;73(2 Pt 1):021603. doi: 10.1103/PhysRevE.73.021603. Epub 2006 Feb 14. Phys Rev E Stat Nonlin Soft Matter Phys. 2006. PMID: 16605346

3

Shape modification of III-V nanowires: the role of nucleation on sidewalls.

Dubrovskii VG, Sibirev NV, Cirlin GE, Tchernycheva M, Harmand JC, Ustinov VM. Dubrovskii VG, et al. Phys Rev E Stat Nonlin Soft Matter Phys. 2008 Mar;77(3 Pt 1):031606. doi: 10.1103/PhysRevE.77.031606. Epub 2008 Mar 14. Phys Rev E Stat Nonlin Soft Matter Phys. 2008. PMID: 18517394

4

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C. Sun MH, et al. Among authors: dubrovskii vg. Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26. Nanotechnology. 2010. PMID: 20657047

5

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment.

Zhang X, Dubrovskii VG, Sibirev NV, Cirlin GE, Sartel C, Tchernycheva M, Harmand JC, Glas F. Zhang X, et al. Among authors: dubrovskii vg. Nanoscale Res Lett. 2010 Jul 24;5(10):1692-7. doi: 10.1007/s11671-010-9698-7. Nanoscale Res Lett. 2010. PMID: 21076695 Free PMC article.

6

New mode of vapor-liquid-solid nanowire growth.

Dubrovskii VG, Cirlin GE, Sibirev NV, Jabeen F, Harmand JC, Werner P. Dubrovskii VG, et al. Nano Lett. 2011 Mar 9;11(3):1247-53. doi: 10.1021/nl104238d. Epub 2011 Feb 23. Nano Lett. 2011. PMID: 21344916

7

Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy.

Dubrovskii VG. Dubrovskii VG. ACS Omega. 2019 May 13;4(5):8400-8405. doi: 10.1021/acsomega.9b00525. eCollection 2019 May 31. ACS Omega. 2019. PMID: 31459928 Free PMC article.

8

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory.

Arif O, Zannier V, Dubrovskii VG, Shtrom IV, Rossi F, Beltram F, Sorba L. Arif O, et al. Among authors: dubrovskii vg. Nanomaterials (Basel). 2020 Mar 10;10(3):494. doi: 10.3390/nano10030494. Nanomaterials (Basel). 2020. PMID: 32164178 Free PMC article.

9

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.

Dubrovskii VG, Hijazi H. Dubrovskii VG, et al. Nanomaterials (Basel). 2020 Apr 27;10(5):833. doi: 10.3390/nano10050833. Nanomaterials (Basel). 2020. PMID: 32349326 Free PMC article.

10

Thermodynamics of the Vapor-Liquid-Solid Growth of Ternary III-V Nanowires in the Presence of Silicon.

Hijazi H, Zeghouane M, Dubrovskii VG. Hijazi H, et al. Among authors: dubrovskii vg. Nanomaterials (Basel). 2021 Jan 2;11(1):83. doi: 10.3390/nano11010083. Nanomaterials (Basel). 2021. PMID: 33401772 Free PMC article.

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