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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy.
Daudin B, Donatini F, Bougerol C, Gayral B, Bellet-Amalric E, Vermeersch R, Feldberg N, Rouvière JL, Recio Carretero MJ, Garro N, Garcia-Orrit S, Cros A. Daudin B, et al. Nanotechnology. 2021 Jan 8;32(2):025601. doi: 10.1088/1361-6528/abb6a5. Nanotechnology. 2021. PMID: 32906087
The structural properties of GaN/AlN core-shell nanocolumn heterostructures.
Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B. Hestroffer K, et al. Among authors: daudin b. Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16. Nanotechnology. 2010. PMID: 20844326
Growth mechanism and properties of InGaN insertions in GaN nanowires.
Tourbot G, Bougerol C, Glas F, Zagonel LF, Mahfoud Z, Meuret S, Gilet P, Kociak M, Gayral B, Daudin B. Tourbot G, et al. Among authors: daudin b. Nanotechnology. 2012 Apr 6;23(13):135703. doi: 10.1088/0957-4484/23/13/135703. Epub 2012 Mar 14. Nanotechnology. 2012. PMID: 22418250
40 results