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Silicon compatible Sn-based resistive switching memory.
Sonde S , Chakrabarti B , Liu Y , Sasikumar K , Lin J , Stan L , Divan R , Ocola LE , Rosenmann D , Choudhury P , Ni K , Sankaranarayanan SKRS , Datta S , Guha S . Sonde S , et al. Among authors: datta s. Nanoscale. 2018 May 24;10(20):9441-9449. doi: 10.1039/c8nr01540f. Nanoscale. 2018. PMID: 29663006
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.
Chakrabarti B, Chan H, Alam K, Koneru A, Gage TE, Ocola LE, Divan R, Rosenmann D, Khanna A, Grisafe B, Sanders T, Datta S, Arslan I, Sankaranarayan SKRS, Guha S. Chakrabarti B, et al. Among authors: datta s. ACS Nano. 2021 Mar 23;15(3):4155-4164. doi: 10.1021/acsnano.0c03201. Epub 2021 Mar 1. ACS Nano. 2021. PMID: 33646747
A steep-slope transistor based on abrupt electronic phase transition.
Shukla N, Thathachary AV, Agrawal A, Paik H, Aziz A, Schlom DG, Gupta SK, Engel-Herbert R, Datta S. Shukla N, et al. Among authors: datta s. Nat Commun. 2015 Aug 7;6:7812. doi: 10.1038/ncomms8812. Nat Commun. 2015. PMID: 26249212 Free PMC article.
Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.
Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, Rastogi R, Pipitone D, Stull C, Cook M, Tyrrell B, Stoica VA, Zhang Z, Freeland JW, Tassone CJ, Mehta A, Saheli G, Thompson D, Suh DI, Koo WT, Nam KJ, Jung DJ, Song WB, Lin CH, Nam S, Heo J, Parihar N, Grigoropoulos CP, Shafer P, Fay P, Ramesh R, Mahapatra S, Ciston J, Datta S, Mohamed M, Hu C, Salahuddin S. Cheema SS, et al. Among authors: datta s. Nature. 2022 Apr;604(7904):65-71. doi: 10.1038/s41586-022-04425-6. Epub 2022 Apr 6. Nature. 2022. PMID: 35388197
3,432 results