Dłużewski P - Search Results

1

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

Sadowski J, Domagala JZ, Mathieu R, Kovacs A, Dłużewski P. Sadowski J, et al. Among authors: dluzewski p. J Phys Condens Matter. 2013 May 15;25(19):196005. doi: 10.1088/0953-8984/25/19/196005. Epub 2013 Apr 19. J Phys Condens Matter. 2013. PMID: 23603378

2

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.

Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D. Sadowski J, et al. Among authors: dluzewski p. Nano Lett. 2007 Sep;7(9):2724-8. doi: 10.1021/nl071190f. Epub 2007 Aug 25. Nano Lett. 2007. PMID: 17718585

3

Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor.

Andrearczyk T, Levchenko K, Sadowski J, Domagala JZ, Kaleta A, Dłużewski P, Wróbel J, Figielski T, Wosinski T. Andrearczyk T, et al. Among authors: dluzewski p. Materials (Basel). 2020 Dec 3;13(23):5507. doi: 10.3390/ma13235507. Materials (Basel). 2020. PMID: 33287117 Free PMC article.

4

TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.

Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K. Dłuzewski P, et al. J Microsc. 2009 Nov;236(2):115-8. doi: 10.1111/j.1365-2818.2009.03255.x. J Microsc. 2009. PMID: 19903235

5

TEM characterization of MBE grown CdTe/ZnTe axial nanowires.

Dłuzewski P, Janik E, Kret S, Zaleszczyk W, Tang D, Karczewski G, Wojtowicz T. Dłuzewski P, et al. J Microsc. 2010 Mar;237(3):337-40. doi: 10.1111/j.1365-2818.2009.03256.x. J Microsc. 2010. PMID: 20500392

6

Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy.

Janik E, Dynowska E, Dłużewski P, Kret S, Presz A, Zaleszczyk W, Szuszkiewicz W, Morhange JF, Petroutchik A, Maćkowski S, Wojtowicz T. Janik E, et al. Among authors: dluzewski p. Nanotechnology. 2008 Sep 10;19(36):365606. doi: 10.1088/0957-4484/19/36/365606. Epub 2008 Jul 28. Nanotechnology. 2008. PMID: 21828877

7

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.

Kret S, Dłużewski P, Szczepańska A, Zak M, Czernecki R, Kryśko M, Leszczyński M, Maciejewski G. Kret S, et al. Among authors: dluzewski p. Nanotechnology. 2007 Nov 21;18(46):465707. doi: 10.1088/0957-4484/18/46/465707. Epub 2007 Oct 12. Nanotechnology. 2007. PMID: 21730494

8

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

Wierzbicka A, Zytkiewicz ZR, Kret S, Borysiuk J, Dluzewski P, Sobanska M, Klosek K, Reszka A, Tchutchulashvili G, Cabaj A, Lusakowska E. Wierzbicka A, et al. Among authors: dluzewski p. Nanotechnology. 2013 Jan 25;24(3):035703. doi: 10.1088/0957-4484/24/3/035703. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23262581

9

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

Zaleszczyk W, Janik E, Presz A, Dłuzewski P, Kret S, Szuszkiewicz W, Morhange JF, Dynowska E, Kirmse H, Neumann W, Petroutchik A, Baczewski LT, Karczewski G, Wojtowicz T. Zaleszczyk W, et al. Among authors: dluzewski p. Nano Lett. 2008 Nov;8(11):4061-5. doi: 10.1021/nl802449g. Epub 2008 Oct 9. Nano Lett. 2008. PMID: 18842031

10

Influence of the Si cap layer on the SiGe islands morphology.

Zak M, Laval JY, Dłuzewski PA, Kret S, Yam V, Bouchier D, Fossard F. Zak M, et al. Among authors: dluzewski pa. Micron. 2009 Jan;40(1):122-5. doi: 10.1016/j.micron.2008.02.010. Epub 2008 Feb 23. Micron. 2009. PMID: 18395456

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