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Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates.
Light Sci Appl. 2022 Jun 1;11(1):165. doi: 10.1038/s41377-022-00850-4.
Light Sci Appl. 2022.
PMID: 35650192
Free PMC article.
Review.
Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template.
Monge-Bartolome L, Cerba T, Díaz-Thomas DA, Bahriz M, Calvo MR, Boissier G, Baron T, Rodriguez JB, Cerutti L, Tournié E.
Monge-Bartolome L, et al. Among authors: diaz thomas da.
Opt Express. 2020 Jul 6;28(14):20785-20793. doi: 10.1364/OE.397164.
Opt Express. 2020.
PMID: 32680131
Free article.
Item in Clipboard
Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm.
Díaz-Thomas DA, Stepanenko O, Bahriz M, Calvez S, Tournié E, Baranov AN, Almuneau G, Cerutti L.
Díaz-Thomas DA, et al.
Opt Express. 2019 Oct 28;27(22):31425-31434. doi: 10.1364/OE.27.031425.
Opt Express. 2019.
PMID: 31684377
Free article.
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Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates.
Fagot M, Díaz-Thomas DA, Gilbert A, Kombila G, Ramonda M, Rouillard Y, Baranov AN, Rodriguez JB, Tournié E, Cerutti L.
Fagot M, et al. Among authors: diaz thomas da.
Opt Express. 2024 Mar 25;32(7):11057-11064. doi: 10.1364/OE.514069.
Opt Express. 2024.
PMID: 38570963
Free article.
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