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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
Micromachines (Basel). 2019.
PMID: 31614745
Free PMC article.
Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.
Bah M, Valente D, Lesecq M, Defrance N, Garcia Barros M, De Jaeger JC, Frayssinet E, Comyn R, Ngo TH, Alquier D, Cordier Y.
Bah M, et al. Among authors: comyn r.
Sci Rep. 2020 Aug 25;10(1):14166. doi: 10.1038/s41598-020-71064-0.
Sci Rep. 2020.
PMID: 32843709
Free PMC article.
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