Cheng L - Search Results

1

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks.

Meng X, Byun YC, Kim HS, Lee JS, Lucero AT, Cheng L, Kim J. Meng X, et al. Among authors: cheng l. Materials (Basel). 2016 Dec 12;9(12):1007. doi: 10.3390/ma9121007. Materials (Basel). 2016. PMID: 28774125 Free PMC article. Review.

2

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

Cheng L, Qin X, Lucero AT, Azcatl A, Huang J, Wallace RM, Cho K, Kim J. Cheng L, et al. ACS Appl Mater Interfaces. 2014 Aug 13;6(15):11834-8. doi: 10.1021/am5032105. Epub 2014 Jul 21. ACS Appl Mater Interfaces. 2014. PMID: 25025335 Free PMC article.

3

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS₂ for Two-Dimensional Material-Based Devices.

Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Cheng L, et al. ACS Nano. 2017 Oct 24;11(10):10243-10252. doi: 10.1021/acsnano.7b04813. Epub 2017 Aug 30. ACS Nano. 2017. PMID: 28832118

4

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.

Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061

5

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics.

Lee J, Ravichandran AV, Mohan J, Cheng L, Lucero AT, Zhu H, Che Z, Catalano M, Kim MJ, Wallace RM, Venugopal A, Choi W, Colombo L, Kim J. Lee J, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36688-36694. doi: 10.1021/acsami.0c07548. Epub 2020 Jul 29. ACS Appl Mater Interfaces. 2020. PMID: 32667778

6

Partially Fluorinated Graphene: Structural and Electrical Characterization.

Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099

7

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM. Zhu H, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2015 Jun 17;7(23):13038-43. doi: 10.1021/acsami.5b03192. Epub 2015 Jun 8. ACS Appl Mater Interfaces. 2015. PMID: 26016806

8

Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM. Zhu H, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14. ACS Appl Mater Interfaces. 2016. PMID: 27386734

9

Combustion Synthesis of p-Type Transparent Conducting CuCrO_2+x and Cu:CrO_x Thin Films at 180 °C.

Wang J, Daunis TB, Cheng L, Zhang B, Kim J, Hsu JWP. Wang J, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3732-3738. doi: 10.1021/acsami.7b13680. Epub 2018 Jan 18. ACS Appl Mater Interfaces. 2018. PMID: 29300452

10

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. Zhou G, et al. Among authors: cheng l. Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print. Adv Mater. 2018. PMID: 30022534

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