Cheng L - Search Results

1

Metal contacts on physical vapor deposited monolayer MoS2.

Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Gong C, et al. Among authors: cheng l. ACS Nano. 2013 Dec 23;7(12):11350-7. doi: 10.1021/nn4052138. Epub 2013 Nov 14. ACS Nano. 2013. PMID: 24219632

2

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS₂ for Two-Dimensional Material-Based Devices.

Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Cheng L, et al. ACS Nano. 2017 Oct 24;11(10):10243-10252. doi: 10.1021/acsnano.7b04813. Epub 2017 Aug 30. ACS Nano. 2017. PMID: 28832118

3

Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing.

Zhu H, Wang Q, Cheng L, Addou R, Kim J, Kim MJ, Wallace RM. Zhu H, et al. Among authors: cheng l. ACS Nano. 2017 Nov 28;11(11):11005-11014. doi: 10.1021/acsnano.7b04984. Epub 2017 Nov 14. ACS Nano. 2017. PMID: 29116754

4

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

Cheng L, Qin X, Lucero AT, Azcatl A, Huang J, Wallace RM, Cho K, Kim J. Cheng L, et al. ACS Appl Mater Interfaces. 2014 Aug 13;6(15):11834-8. doi: 10.1021/am5032105. Epub 2014 Jul 21. ACS Appl Mater Interfaces. 2014. PMID: 25025335 Free PMC article.

5

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, Wallace RM, Hinkle CL. Yue R, et al. Among authors: cheng l. ACS Nano. 2015 Jan 27;9(1):474-80. doi: 10.1021/nn5056496. Epub 2014 Dec 22. ACS Nano. 2015. PMID: 25496648

6

Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM. Zhu H, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14. ACS Appl Mater Interfaces. 2016. PMID: 27386734

7

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Azcatl A, et al. Among authors: cheng l. Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9. Nano Lett. 2016. PMID: 27494551

8

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM. Zhu H, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2015 Jun 17;7(23):13038-43. doi: 10.1021/acsami.5b03192. Epub 2015 Jun 8. ACS Appl Mater Interfaces. 2015. PMID: 26016806

9

Partially Fluorinated Graphene: Structural and Electrical Characterization.

Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099

10

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.

Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: cheng l. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

13,819 results

Search Page