Chen KH - Search Results

1

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO_X:SiO₂ Thin Films on Resistive Random Access Memory Devices.

Chen KH, Cheng CM, Wang NF, Kao MC. Chen KH, et al. Nanomaterials (Basel). 2023 Jul 26;13(15):2179. doi: 10.3390/nano13152179. Nanomaterials (Basel). 2023. PMID: 37570498 Free PMC article.

2

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.

Kao MC, Chen HZ, Young SL, Chen KH, Chiang JL, Shi JB. Kao MC, et al. Among authors: chen hz, chen kh. Materials (Basel). 2017 Nov 20;10(11):1327. doi: 10.3390/ma10111327. Materials (Basel). 2017. PMID: 29156636 Free PMC article.

3

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

Chen KH, Kao MC, Huang SJ, Li JZ. Chen KH, et al. Materials (Basel). 2017 Dec 12;10(12):1415. doi: 10.3390/ma10121415. Materials (Basel). 2017. PMID: 29231867 Free PMC article.

4

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.

Chen KH, Tsai TM, Cheng CM, Huang SJ, Chang KC, Liang SP, Young TF. Chen KH, et al. Materials (Basel). 2017 Dec 28;11(1):43. doi: 10.3390/ma11010043. Materials (Basel). 2017. PMID: 29283368 Free PMC article.

5

Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba_0.95Ca_0.05)(Ti_0.93Sn_0.07)O₃ Lead-Free Piezoceramic Sheets.

Cheng CM, Chen KH, Lee DH, Jong FC, Chen ML, Chang JK. Cheng CM, et al. Among authors: chen ml, chen kh. Materials (Basel). 2018 Jan 24;11(2):182. doi: 10.3390/ma11020182. Materials (Basel). 2018. PMID: 29364832 Free PMC article.

6

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.

Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S. Chen KH, et al. Nanomaterials (Basel). 2023 Jan 1;13(1):198. doi: 10.3390/nano13010198. Nanomaterials (Basel). 2023. PMID: 36616108 Free PMC article.

7

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.

Chen KH, Cheng CM, Chen ML, Pan YY. Chen KH, et al. Among authors: chen ml. Nanomaterials (Basel). 2023 Feb 10;13(4):688. doi: 10.3390/nano13040688. Nanomaterials (Basel). 2023. PMID: 36839057 Free PMC article.

8

Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films.

Weng JH, Kao MC, Chen KH, Li MZ. Weng JH, et al. Among authors: chen kh. Nanomaterials (Basel). 2023 Sep 30;13(19):2685. doi: 10.3390/nano13192685. Nanomaterials (Basel). 2023. PMID: 37836326 Free PMC article.

9

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

Chen YJ, Chen HL, Young TF, Chang TC, Tsai TM, Chang KC, Zhang R, Chen KH, Lou JC, Chu TJ, Chen JH, Bao DH, Sze SM. Chen YJ, et al. Among authors: chen jh, chen hl, chen kh. Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52. Nanoscale Res Lett. 2014. PMID: 24475979 Free PMC article.

10

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM. Chen KH, et al. Nanoscale Res Lett. 2016 Dec;11(1):52. doi: 10.1186/s11671-016-1272-5. Epub 2016 Feb 1. Nanoscale Res Lett. 2016. PMID: 26831690 Free PMC article.

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