Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.
Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM.
Chang KC, et al. Among authors: chen jh, chen kh.
Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523.
Nanoscale Res Lett. 2013.
PMID: 24330524
Free PMC article.