Chang EY - Search Results

1

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages.

Lin Y, Kao ML, Weng YC, Dee CF, Chen SC, Kuo HC, Lin CH, Chang EY. Lin Y, et al. Among authors: chang ey. Micromachines (Basel). 2022 Dec 3;13(12):2140. doi: 10.3390/mi13122140. Micromachines (Basel). 2022. PMID: 36557439 Free PMC article.

2

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.

Lin YC, Chen SH, Lee PH, Lai KH, Huang TJ, Chang EY, Hsu HT. Lin YC, et al. Among authors: chang ey. Micromachines (Basel). 2020 Feb 21;11(2):222. doi: 10.3390/mi11020222. Micromachines (Basel). 2020. PMID: 32098124 Free PMC article.

3

Hysteresis in As-Synthesized MoS₂ Transistors: Origin and Sensing Perspectives.

Marquez C, Salazar N, Gity F, Galdon JC, Navarro C, Sampedro C, Hurley PK, Chang EY, Gamiz F. Marquez C, et al. Among authors: chang ey. Micromachines (Basel). 2021 May 31;12(6):646. doi: 10.3390/mi12060646. Micromachines (Basel). 2021. PMID: 34073095 Free PMC article.

4

The Evolution of Manufacturing Technology for GaN Electronic Devices.

Liu AC, Tu PT, Langpoklakpam C, Huang YW, Chang YT, Tzou AJ, Hsu LH, Lin CH, Kuo HC, Chang EY. Liu AC, et al. Among authors: chang ey, chang yt. Micromachines (Basel). 2021 Jun 23;12(7):737. doi: 10.3390/mi12070737. Micromachines (Basel). 2021. PMID: 34201620 Free PMC article. Review.

5

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration.

Hsu LH, Lai YY, Tu PT, Langpoklakpam C, Chang YT, Huang YW, Lee WC, Tzou AJ, Cheng YJ, Lin CH, Kuo HC, Chang EY. Hsu LH, et al. Among authors: chang ey, chang yt. Micromachines (Basel). 2021 Sep 27;12(10):1159. doi: 10.3390/mi12101159. Micromachines (Basel). 2021. PMID: 34683210 Free PMC article. Review.

6

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.

Hong KB, Peng CY, Lin WC, Chen KL, Chen SC, Kuo HC, Chang EY, Lin CH. Hong KB, et al. Among authors: chang ey. Micromachines (Basel). 2023 Feb 23;14(3):519. doi: 10.3390/mi14030519. Micromachines (Basel). 2023. PMID: 36984926 Free PMC article.

7

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.

Weng YC, Hsiao MY, Lin CH, Lan YP, Chang EY. Weng YC, et al. Among authors: chang ey. Materials (Basel). 2023 Apr 26;16(9):3376. doi: 10.3390/ma16093376. Materials (Basel). 2023. PMID: 37176258 Free PMC article.

8

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications.

Lee MW, Lin YC, Hsu HT, Gamiz F, Chang EY. Lee MW, et al. Among authors: chang ey. Micromachines (Basel). 2023 Apr 25;14(5):931. doi: 10.3390/mi14050931. Micromachines (Basel). 2023. PMID: 37241557 Free PMC article.

9

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.

Chen KM, Lin CJ, Chuang CW, Pai HC, Chang EY, Huang GW. Chen KM, et al. Among authors: chang ey. Micromachines (Basel). 2023 May 8;14(5):1011. doi: 10.3390/mi14051011. Micromachines (Basel). 2023. PMID: 37241634 Free PMC article.

10

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.

Lee MW, Chuang CW, Gamiz F, Chang EY, Lin YC. Lee MW, et al. Among authors: chang ey. Micromachines (Basel). 2023 Dec 30;15(1):81. doi: 10.3390/mi15010081. Micromachines (Basel). 2023. PMID: 38258200 Free PMC article.

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