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Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.
Groenendijk DJ, Buscema M, Steele GA, Michaelis de Vasconcellos S, Bratschitsch R, van der Zant HS, Castellanos-Gomez A. Groenendijk DJ, et al. Among authors: bratschitsch r. Nano Lett. 2014 Oct 8;14(10):5846-52. doi: 10.1021/nl502741k. Epub 2014 Sep 22. Nano Lett. 2014. PMID: 25232893
Strain Control of Exciton-Phonon Coupling in Atomically Thin Semiconductors.
Niehues I, Schmidt R, Drüppel M, Marauhn P, Christiansen D, Selig M, Berghäuser G, Wigger D, Schneider R, Braasch L, Koch R, Castellanos-Gomez A, Kuhn T, Knorr A, Malic E, Rohlfing M, Michaelis de Vasconcellos S, Bratschitsch R. Niehues I, et al. Among authors: bratschitsch r. Nano Lett. 2018 Mar 14;18(3):1751-1757. doi: 10.1021/acs.nanolett.7b04868. Epub 2018 Feb 8. Nano Lett. 2018. PMID: 29389133
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS₂, MoSe₂, WS₂ and WSe₂.
Niu Y, Gonzalez-Abad S, Frisenda R, Marauhn P, Drüppel M, Gant P, Schmidt R, Taghavi NS, Barcons D, Molina-Mendoza AJ, de Vasconcellos SM, Bratschitsch R, Perez De Lara D, Rohlfing M, Castellanos-Gomez A. Niu Y, et al. Among authors: bratschitsch r. Nanomaterials (Basel). 2018 Sep 14;8(9):725. doi: 10.3390/nano8090725. Nanomaterials (Basel). 2018. PMID: 30223445 Free PMC article.
Interlayer excitons in bilayer MoS2 under uniaxial tensile strain.
Niehues I, Blob A, Stiehm T, Michaelis de Vasconcellos S, Bratschitsch R. Niehues I, et al. Among authors: bratschitsch r. Nanoscale. 2019 Jul 21;11(27):12788-12792. doi: 10.1039/c9nr03332g. Epub 2019 Jun 27. Nanoscale. 2019. PMID: 31245801
Strain tuning of the Stokes shift in atomically thin semiconductors.
Niehues I, Marauhn P, Deilmann T, Wigger D, Schmidt R, Arora A, Michaelis de Vasconcellos S, Rohlfing M, Bratschitsch R. Niehues I, et al. Among authors: bratschitsch r. Nanoscale. 2020 Oct 22;12(40):20786-20796. doi: 10.1039/d0nr04557h. Nanoscale. 2020. PMID: 33034315
64 results