Bougerol C - Search Results

1

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.

Abid I, Kabouche R, Bougerol C, Pernot J, Masante C, Comyn R, Cordier Y, Medjdoub F. Abid I, et al. Among authors: bougerol c. Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690. Micromachines (Basel). 2019. PMID: 31614745 Free PMC article.

2

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources.

Dimkou I, Harikumar A, Donatini F, Lähnemann J, den Hertog MI, Bougerol C, Bellet-Amalric E, Mollard N, Ajay A, Ledoux G, Purcell ST, Monroy E. Dimkou I, et al. Among authors: bougerol c. Nanotechnology. 2020 May 15;31(20):204001. doi: 10.1088/1361-6528/ab704d. Epub 2020 Jan 27. Nanotechnology. 2020. PMID: 31986502 Free article.

3

Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources.

Harikumar A, Donatini F, Bougerol C, Bellet-Amalric E, Thai QM, Dujardin C, Dimkou I, Purcell ST, Monroy E. Harikumar A, et al. Among authors: bougerol c. Nanotechnology. 2020 Dec 11;31(50):505205. doi: 10.1088/1361-6528/aba86c. Nanotechnology. 2020. PMID: 32698175

4

UV Emission from GaN Wires with m-Plane Core-Shell GaN/AlGaN Multiple Quantum Wells.

Grenier V, Finot S, Jacopin G, Bougerol C, Robin E, Mollard N, Gayral B, Monroy E, Eymery J, Durand C. Grenier V, et al. Among authors: bougerol c. ACS Appl Mater Interfaces. 2020 Sep 30;12(39):44007-44016. doi: 10.1021/acsami.0c08765. Epub 2020 Sep 21. ACS Appl Mater Interfaces. 2020. PMID: 32894670

5

Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.

Renard J, Songmuang R, Bougerol C, Daudin B, Gayral B. Renard J, et al. Among authors: bougerol c. Nano Lett. 2008 Jul;8(7):2092-6. doi: 10.1021/nl0800873. Epub 2008 May 30. Nano Lett. 2008. PMID: 18510368

6

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.

Bougerol C, Songmuang R, Camacho D, Niquet YM, Mata R, Cros A, Daudin B. Bougerol C, et al. Nanotechnology. 2009 Jul 22;20(29):295706. doi: 10.1088/0957-4484/20/29/295706. Epub 2009 Jul 1. Nanotechnology. 2009. PMID: 19567953

7

Quantum transport in GaN/AlN double-barrier heterostructure nanowires.

Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. Songmuang R, et al. Among authors: bougerol c. Nano Lett. 2010 Sep 8;10(9):3545-50. doi: 10.1021/nl1017578. Nano Lett. 2010. PMID: 20731363

8

The structural properties of GaN/AlN core-shell nanocolumn heterostructures.

Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B. Hestroffer K, et al. Among authors: bougerol c. Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16. Nanotechnology. 2010. PMID: 20844326

9

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band.

Lim CB, Ajay A, Bougerol C, Haas B, Schörmann J, Beeler M, Lähnemann J, Eickhoff M, Monroy E. Lim CB, et al. Among authors: bougerol c. Nanotechnology. 2015 Oct 30;26(43):435201. doi: 10.1088/0957-4484/26/43/435201. Epub 2015 Oct 5. Nanotechnology. 2015. PMID: 26437371

10

Dopant radial inhomogeneity in Mg-doped GaN nanowires.

Siladie AM, Amichi L, Mollard N, Mouton I, Bonef B, Bougerol C, Grenier A, Robin E, Jouneau PH, Garro N, Cros A, Daudin B. Siladie AM, et al. Among authors: bougerol c. Nanotechnology. 2018 Jun 22;29(25):255706. doi: 10.1088/1361-6528/aabbd6. Epub 2018 Apr 5. Nanotechnology. 2018. PMID: 29620532

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