Borgström M - Search Results

1

Revealing misfit dislocations in InAs _x P_1-x -InP core-shell nanowires by x-ray diffraction.

Lazarev S, Göransson DJO, Borgström M, Messing ME, Xu HQ, Dzhigaev D, Yefanov OM, Bauer S, Baumbach T, Feidenhans'l R, Samuelson L, Vartanyants IA. Lazarev S, et al. Among authors: borgstrom m. Nanotechnology. 2019 Dec 13;30(50):505703. doi: 10.1088/1361-6528/ab40f1. Epub 2019 Sep 3. Nanotechnology. 2019. PMID: 31480023

2

Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy.

Mikkelsen A, Sköld N, Ouattara L, Borgström M, Andersen JN, Samuelson L, Seifert W, Lundgren E. Mikkelsen A, et al. Among authors: borgstrom m. Nat Mater. 2004 Aug;3(8):519-23. doi: 10.1038/nmat1164. Epub 2004 Jul 4. Nat Mater. 2004. PMID: 15235596

3

Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.

Münch S, Reitzenstein S, Borgström M, Thelander C, Samuelson L, Worschech L, Forchel A. Münch S, et al. Among authors: borgstrom m. Nanotechnology. 2010 Mar 12;21(10):105711. doi: 10.1088/0957-4484/21/10/105711. Epub 2010 Feb 16. Nanotechnology. 2010. PMID: 20157234

4

Probing strain in bent semiconductor nanowires with Raman spectroscopy.

Chen J, Conache G, Pistol ME, Gray SM, Borgström MT, Xu H, Xu HQ, Samuelson L, Håkanson U. Chen J, et al. Among authors: borgstrom mt. Nano Lett. 2010 Apr 14;10(4):1280-6. doi: 10.1021/nl904040y. Nano Lett. 2010. PMID: 20192231

5

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L. Thelander C, et al. Among authors: borgstrom mt. Nanotechnology. 2010 May 21;21(20):205703. doi: 10.1088/0957-4484/21/20/205703. Epub 2010 Apr 23. Nanotechnology. 2010. PMID: 20413840

6

Changes in contact angle of seed particle correlated with increased zincblende formation in doped InP nanowires.

Wallentin J, Ek M, Wallenberg LR, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Among authors: borgstrom mt. Nano Lett. 2010 Dec 8;10(12):4807-12. doi: 10.1021/nl101747z. Epub 2010 Nov 2. Nano Lett. 2010. PMID: 21043510

7

Precursor evaluation for in situ InP nanowire doping.

Borgström MT, Norberg E, Wickert P, Nilsson HA, Trägårdh J, Dick KA, Statkute G, Ramvall P, Deppert K, Samuelson L. Borgström MT, et al. Nanotechnology. 2008 Nov 5;19(44):445602. doi: 10.1088/0957-4484/19/44/445602. Epub 2008 Sep 29. Nanotechnology. 2008. PMID: 21832734

8

A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.

Borschel C, Messing ME, Borgström MT, Paschoal W, Wallentin J, Kumar S, Mergenthaler K, Deppert K, Canali CM, Pettersson H, Samuelson L, Ronning C. Borschel C, et al. Among authors: borgstrom mt. Nano Lett. 2011 Sep 14;11(9):3935-40. doi: 10.1021/nl2021653. Epub 2011 Aug 22. Nano Lett. 2011. PMID: 21848314

9

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J. Kriegner D, et al. Among authors: borgstrom mt. Nanotechnology. 2011 Oct 21;22(42):425704. doi: 10.1088/0957-4484/22/42/425704. Epub 2011 Sep 22. Nanotechnology. 2011. PMID: 21937785

10

Electron trapping in InP nanowire FETs with stacking faults.

Wallentin J, Ek M, Wallenberg LR, Samuelson L, Borgström MT. Wallentin J, et al. Among authors: borgstrom mt. Nano Lett. 2012 Jan 11;12(1):151-5. doi: 10.1021/nl203213d. Epub 2011 Dec 7. Nano Lett. 2012. PMID: 22149329

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