Biermanns A - Search Results

1

Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction.

Schroth P, Köhl M, Hornung JW, Dimakis E, Somaschini C, Geelhaar L, Biermanns A, Bauer S, Lazarev S, Pietsch U, Baumbach T. Schroth P, et al. Among authors: biermanns a. Phys Rev Lett. 2015 Feb 6;114(5):055504. doi: 10.1103/PhysRevLett.114.055504. Epub 2015 Feb 5. Phys Rev Lett. 2015. PMID: 25699455

2

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.

Somaschini C, Biermanns A, Bietti S, Bussone G, Trampert A, Sanguinetti S, Riechert H, Pietsch U, Geelhaar L. Somaschini C, et al. Among authors: biermanns a. Nanotechnology. 2014 Dec 5;25(48):485602. doi: 10.1088/0957-4484/25/48/485602. Epub 2014 Nov 13. Nanotechnology. 2014. PMID: 25391271

3

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy.

Davydok A, Breuer S, Biermanns A, Geelhaar L, Pietsch U. Davydok A, et al. Among authors: biermanns a. Nanoscale Res Lett. 2012 Feb 8;7(1):109. doi: 10.1186/1556-276X-7-109. Nanoscale Res Lett. 2012. PMID: 22315928 Free PMC article.

4

Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111).

Biermanns A, Dimakis E, Davydok A, Sasaki T, Geelhaar L, Takahasi M, Pietsch U. Biermanns A, et al. Nano Lett. 2014 Dec 10;14(12):6878-83. doi: 10.1021/nl502878a. Epub 2014 Nov 20. Nano Lett. 2014. PMID: 25400142

5

Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates.

Bussone G, Schäfer-Eberwein H, Dimakis E, Biermanns A, Carbone D, Tahraoui A, Geelhaar L, Bolívar PH, Schülli TU, Pietsch U. Bussone G, et al. Among authors: biermanns a. Nano Lett. 2015 Feb 11;15(2):981-9. doi: 10.1021/nl5037879. Epub 2015 Jan 29. Nano Lett. 2015. PMID: 25631459

6

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).

Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U. Biermanns A, et al. Nanotechnology. 2012 Aug 3;23(30):305703. doi: 10.1088/0957-4484/23/30/305703. Epub 2012 Jul 2. Nanotechnology. 2012. PMID: 22751267

7

Individual GaAs nanorods imaged by coherent X-ray diffraction.

Biermanns A, Davydok A, Paetzelt H, Diaz A, Gottschalch V, Metzger TH, Pietsch U. Biermanns A, et al. J Synchrotron Radiat. 2009 Nov;16(Pt 6):796-802. doi: 10.1107/S0909049509032889. Epub 2009 Sep 10. J Synchrotron Radiat. 2009. PMID: 19844016

8

Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams.

Bussone G, Schott R, Biermanns A, Davydok A, Reuter D, Carbone G, Schülli TU, Wieck AD, Pietsch U. Bussone G, et al. Among authors: biermanns a. J Appl Crystallogr. 2013 Aug 1;46(Pt 4):887-892. doi: 10.1107/S0021889813004226. Epub 2013 Jun 7. J Appl Crystallogr. 2013. PMID: 24046493 Free PMC article.

9

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.

Davydok A, Rieger T, Biermanns A, Saqib M, Grap T, Lepsa MI, Pietsch U. Davydok A, et al. Among authors: biermanns a. J Appl Crystallogr. 2013 Aug 1;46(Pt 4):893-897. doi: 10.1107/S0021889813010522. Epub 2013 Jun 7. J Appl Crystallogr. 2013. PMID: 24046494 Free PMC article.

10

Crystallization of HfO2 in InAs/HfO2 core-shell nanowires.

Rieger T, Jörres T, Vogel J, Biermanns A, Pietsch U, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: biermanns a. Nanotechnology. 2014 Oct 10;25(40):405701. doi: 10.1088/0957-4484/25/40/405701. Epub 2014 Sep 11. Nanotechnology. 2014. PMID: 25211286

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