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Single- and double-gate synaptic transistor with TaO x gate insulator and IGZO channel layer.
Nanotechnology. 2019 Jan 11;30(2):025203. doi: 10.1088/1361-6528/aae8d2. Epub 2018 Nov 2.
Nanotechnology. 2019.
PMID: 30387440
Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure.
Kim HJ, Park D, Yang P, Beom K, Kim MJ, Shin C, Kang CJ, Yoon TS.
Kim HJ, et al. Among authors: beom k.
Nanotechnology. 2018 Jun 29;29(26):265204. doi: 10.1088/1361-6528/aabcf6. Epub 2018 Apr 10.
Nanotechnology. 2018.
PMID: 29633723
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Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.
Yang P, Park D, Beom K, Kim HJ, Kang CJ, Yoon TS.
Yang P, et al. Among authors: beom k.
Nanotechnology. 2018 Jul 20;29(29):295201. doi: 10.1088/1361-6528/aac17e. Epub 2018 May 1.
Nanotechnology. 2018.
PMID: 29714170
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Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor.
Beom K, Kim M, Lee H, Kim HJ, Cho SY, Lee HH, Kang CJ, Yoon TS.
Beom K, et al.
Nanotechnology. 2020 Apr 9;31(26):265201. doi: 10.1088/1361-6528/ab7fce. Epub 2020 Mar 13.
Nanotechnology. 2020.
PMID: 32168505
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Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application.
Beom K, Han J, Kim HM, Yoon TS.
Beom K, et al.
Nanoscale. 2021 Jul 8;13(26):11370-11379. doi: 10.1039/d1nr02911h.
Nanoscale. 2021.
PMID: 34160528
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