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Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
ACS Nano. 2015 May 26;9(5):4872-81. doi: 10.1021/nn5064216. Epub 2015 Apr 24.
ACS Nano. 2015.
PMID: 25817336
Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory.
Sharma P, Bernard LS, Bazigos A, Magrez A, Ionescu AM.
Sharma P, et al. Among authors: bazigos a.
ACS Nano. 2015 Jan 27;9(1):620-5. doi: 10.1021/nn5059437. Epub 2015 Jan 2.
ACS Nano. 2015.
PMID: 25551735
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