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The Role of Oxygen Atoms on Excitons at the Edges of Monolayer WS2.
Hu Z, Avila J, Wang X, Leong JF, Zhang Q, Liu Y, Asensio MC, Lu J, Carvalho A, Sow CH, Castro Neto AH. Hu Z, et al. Among authors: asensio mc. Nano Lett. 2019 Jul 10;19(7):4641-4650. doi: 10.1021/acs.nanolett.9b01670. Epub 2019 Jun 18. Nano Lett. 2019. PMID: 31189314
Spatial Control of Charge Doping in n-Type Topological Insulators.
Sakamoto K, Ishikawa H, Wake T, Ishimoto C, Fujii J, Bentmann H, Ohtaka M, Kuroda K, Inoue N, Hattori T, Miyamachi T, Komori F, Yamamoto I, Fan C, Krüger P, Ota H, Matsui F, Reinert F, Avila J, Asensio MC. Sakamoto K, et al. Among authors: asensio mc. Nano Lett. 2021 May 26;21(10):4415-4422. doi: 10.1021/acs.nanolett.1c01100. Epub 2021 May 12. Nano Lett. 2021. PMID: 33978424
Environmental Control of Charge Density Wave Order in Monolayer 2H-TaS2.
Hall J, Ehlen N, Berges J, van Loon E, van Efferen C, Murray C, Rösner M, Li J, Senkovskiy BV, Hell M, Rolf M, Heider T, Asensio MC, Avila J, Plucinski L, Wehling T, Grüneis A, Michely T. Hall J, et al. Among authors: asensio mc. ACS Nano. 2019 Sep 24;13(9):10210-10220. doi: 10.1021/acsnano.9b03419. Epub 2019 Aug 30. ACS Nano. 2019. PMID: 31442021
Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.
Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B, Yin S, He K, Arabchigavkani N, Dixit R, Komesu T, Avila J, Asensio MC, Dowben PA, Sinitskii A, Singisetti U, Bird JP. Randle M, et al. Among authors: asensio mc. ACS Nano. 2019 Jan 22;13(1):803-811. doi: 10.1021/acsnano.8b08260. Epub 2018 Dec 28. ACS Nano. 2019. PMID: 30586504
65 results