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2020 | 1 |
2022 | 1 |
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.
Materials (Basel). 2022 Jan 31;15(3):1118. doi: 10.3390/ma15031118.
Materials (Basel). 2022.
PMID: 35161062
Free PMC article.
AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J, Šimukovič A, Dub M, Sakowicz M, Prystawko P, Indrišiūnas S, Kovalevskij V, Rumyantsev S, Knap W, Kašalynas I.
Jorudas J, et al. Among authors: simukovic a.
Micromachines (Basel). 2020 Dec 20;11(12):1131. doi: 10.3390/mi11121131.
Micromachines (Basel). 2020.
PMID: 33419371
Free PMC article.
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