Amano H - Search Results

1

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions.

Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H. Schimmel S, et al. Among authors: amano h. Materials (Basel). 2023 Feb 28;16(5):2016. doi: 10.3390/ma16052016. Materials (Basel). 2023. PMID: 36903128 Free PMC article.

2

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.

Son JS, Honda Y, Amano H. Son JS, et al. Among authors: amano h. Opt Express. 2014 Feb 10;22(3):3585-92. doi: 10.1364/OE.22.003585. Opt Express. 2014. PMID: 24663649 Free article.

3

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Jung BO, Bae SY, Lee S, Kim SY, Lee JY, Honda Y, Amano H. Jung BO, et al. Among authors: amano h. Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22. Nanoscale Res Lett. 2016. PMID: 27102904 Free PMC article.

4

III-nitride core-shell nanorod array on quartz substrates.

Bae SY, Min JW, Hwang HY, Lekhal K, Lee HJ, Jho YD, Lee DS, Lee YT, Ikarashi N, Honda Y, Amano H. Bae SY, et al. Among authors: amano h. Sci Rep. 2017 Mar 27;7:45345. doi: 10.1038/srep45345. Sci Rep. 2017. PMID: 28345641 Free PMC article.

5

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics.

Yoshino M, Ando Y, Deki M, Toyabe T, Kuriyama K, Honda Y, Nishimura T, Amano H, Kachi T, Nakamura T. Yoshino M, et al. Among authors: amano h. Materials (Basel). 2019 Feb 26;12(5):689. doi: 10.3390/ma12050689. Materials (Basel). 2019. PMID: 30813566 Free PMC article.

6

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties.

Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M. Dinh DV, et al. Among authors: amano h. Sci Rep. 2019 Nov 1;9(1):15802. doi: 10.1038/s41598-019-52067-y. Sci Rep. 2019. PMID: 31676798 Free PMC article.

7

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T. Yamamoto K, et al. Among authors: amano h. Microscopy (Oxf). 2020 Mar 9;69(1):1-10. doi: 10.1093/jmicro/dfz037. Microscopy (Oxf). 2020. PMID: 31711167

8

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency.

Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H. Sandupatla A, et al. Among authors: amano h. Sensors (Basel). 2019 Nov 21;19(23):5107. doi: 10.3390/s19235107. Sensors (Basel). 2019. PMID: 31766532 Free PMC article.

9

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

Yang X, Pristovsek M, Nitta S, Liu Y, Honda Y, Koide Y, Kawarada H, Amano H. Yang X, et al. Among authors: amano h. ACS Appl Mater Interfaces. 2020 Oct 14;12(41):46466-46475. doi: 10.1021/acsami.0c11883. Epub 2020 Sep 30. ACS Appl Mater Interfaces. 2020. PMID: 32940029

10

Smart-cut-like laser slicing of GaN substrate using its own nitrogen.

Tanaka A, Sugiura R, Kawaguchi D, Yui T, Wani Y, Aratani T, Watanabe H, Sena H, Honda Y, Igasaki Y, Amano H. Tanaka A, et al. Among authors: amano h. Sci Rep. 2021 Sep 9;11(1):17949. doi: 10.1038/s41598-021-97159-w. Sci Rep. 2021. PMID: 34504143 Free PMC article.

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